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| FPN530 / FPN530A FPN530 FPN530A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25C unless otherwise noted Parameter Value 30 60 5.0 3.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPN530 / FPN530A 1.0 50 125 Units W C/W C/W 1999 Fairchild Semiconductor Corporation FPN530 / FPN530A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, IE = 0 IE = 100 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 100C VEB = 4.0 V, IC = 0 30 60 5.0 100 10 100 V V V nA A nA ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2.0 V IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V IC = 1.0 A, IB = 100 mA IC = 2.0 A, IB = 200 mA IC = 1.0 A, IB = 100 mA IC = 1.0 A, VCE = 2.0 V 530 530A 100 250 120 80 300 250 450 1.25 1.0 mV mV mV V V VCE(sat) Collector-Emitter Saturation Voltage 530 530A VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Cobo FT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1.0 MHz IC = 100 mA, VCE = 5.0 V, f = 100 MHz 150 50 pF MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FPN530 / FPN530A NPN Low Saturation Transistor (continued) Typical Characteristics VBESAT -BASE-EMITTER SATURATION VOLTAGE(V) 1.6 1.4 1.2 1 0.8 0.6 V BEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 Base-Emitter On Voltage vs Collector Current 1.4 Vce = 2.0V 1.2 1 - 40 C - 40 C 0.8 0.6 0.4 0.2 0.0001 25 C 25 C 125 C 0.4 0.2 0.001 125 C 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current 0.8 = 10 Input/Output Capacitance vs Reverse Bias Voltage 450 400 CAPACITANCE (pf) 350 300 250 200 150 100 50 Cobo f = 1.0MHz Cibo 0.6 25C 0.4 125C 0.2 - 40C 0 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0 0.1 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Current Gain vs Collector Current 800 Vce = 2.0V Power Dissipation vs Ambient Temperature PD - POWER DIS SIPATION (W) 1 700 H FE - CURRENT GAIN 125C TO-226 0.75 600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 25C 0.5 - 40C 0.25 0 0 25 50 75 100 TEMPERATURE ( C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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