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| Datasheet File OCR Text: |
| SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 - JANUARY 1998 PIN CONFIGURATION 1 FMMV3102 2 1 PARTMARKING DETAIL FMMV3102 - 4C 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Reverse current Series Inductance Diode Capacitance Temperature Coefficient Case Capacitance SYMBOL V BR MIN. 30 TYP. MAX. UNIT V CONDITIONS. I R = 10A V R = 25V f=250MHz IR LS T CC 3.0 280 10 nA nH ppm/ C V R = 3V, f=1MHz CC 0.1 pF f=1MHz TUNING CHARACTERISTICS (at Tamb = 25C). PARAMETER Diode Capacitance Capacitance Ratio Figure of MERIT SYMBOL Cd Cd / Cd Q MIN. 20 4.5 200 300 TYP. MAX. 25 UNIT pF CONDITIONS. V R = 3V, f=1MHz V R = 3V/25V, f=1MHz V R = 3V, f=50MHz Spice parameter data is available upon request for this device |
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