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FJY3007R NPN Epitaxial Silicon Transistor
November 2006
FJY3007R
NPN Epitaxial Silicon Transistor
Features
* Switching circuit, Inverter, Interface circuit, Driver Circuit * Built in bias Resistor (R1=22K, R2=47K) * Complement to FJY4007R
Eqivalent Circuit
C
tm
C
E
S07
B E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25C unless otherwise noted
Parameter
Value
50 50 10 100 -55~150 150 200
Units
V V V mA C C mW
TSTG TJ
PC
Storage Temperature Range Junction Temperature
Collector Power Dissipation, by RJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25C unless otherwise noted
a
Symbol
RJA
* Minimum land pad size.
Parameter
Thermal Resistance, Junction to Ambient
Max
600
Units
C/W
Electrical Characteristics*
Symbol
V(BR)CBO V(BR)CEO ICBO hFE VCE(sat) fT Ccb VI(off) VI(on) R1 R1/R2
TC = 25C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product
Output Capacitance
Test Condition
IC = 10 uA, IE = 0 IC = 100 uA, IB = 0 VCB = 40 V, IE = 0 VCE = 5 V, IC = 5 mA IC = 10 mA, IB = 0.5 mA VCE = 10V, IC = 5 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 5 V, IC = 100uA VCE = 0.3V, IC = 2mA
MIN
50 50
Typ
MAX
Units
V V
0.1 68 0.3 250 3.7 0.4 2.5 15 0.42 22 0.47 29 0.52
uA
V MHz pF V V K
Input Off Voltage Input On Voltage Input Resistor Resistor Ratio
* Pulse Test: PW300s, Duty Cycle2%
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJY3007R Rev. A
FJY3007R NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC current Gain
1000
Figure 2. Input On Voltage
VCE = 5V R1 = 22K R2 = 47K
100
VCE = 0.3V R1 = 22K R2 = 47K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
100
10
10
1
1 0.1
1
10
100
0.1 0.1
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Input off Voltage
10k
Figure 4. Power Derating
280
IC [A], COLLECTOR CURRENT
1k
PC[mW], POWER DISSIPATION
VCE = 5V R1 = 22K R2 = 47K
240
200
160
100
120
80
10
40
1 0.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
25
50
o
75
100
125
150
175
VI(off)[V], INPUT OFF VOLTAGE
Ta[ C], AMBIENT TEMPERATURE
2 FJY3007R Rev. A
www.fairchildsemi.com
FJY3007R NPN Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
Dimensions in Millimeters
3 FJY3007R Rev. A
www.fairchildsemi.com
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22

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