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FGPF120N30 300V, 120A PDP IGBT
January 2006
FGPF120N30
300V, 120A PDP IGBT
Features
* * * * High Current Capability Low saturation voltage : VCE(sat) = 1.1 V @ IC = 25A High input impedance Fast switching
General Description
Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.
Application
PDP SYSTEM
C
TO-220F 1.Gate 2.Collector 3.Emitter
G E
Absolute Maximum Ratings
Symbol VCES VGES IC IC_pulse (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds FGPF120N30 300 20 120 180 * 60 24 -55 to +150 -55 to +150 300 Units V V A A W W C C C
@ TC = 25C @ TC = 25C @ TC = 25C @ TC = 100C
Thermal Characteristics
Symbol RJC(IGBT) RJA Notes (1) Repetitive test , pulse width=100usec , Duty=0.5 * Ic_pulse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 2.1 62.5 Units C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF120N30
Device
FGPF120N30TU
Package
TO-220F
Packaging Type
Rail / Tube
Qty per Tube
50ea
Max Qty per Box
-
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 300 ----0.6 ----100 250 V V/C uA nA
On Characteristics
VGE(th) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 25A, VGE = 15V IC = 120A, VGE = 15V TC = 25C IC = 120 A, VGE = 15V TC = 125C 2.5 ---4.0 1.1 1.9 2.1 5.0 1.4 --V V V V
VCE(sat)
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2190 310 98 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200 V, IC = 25A, RG = 8.7, VGE = 15V, Resistive Load, TC = 25C VCC = 200 V, IC = 25 A, RG = 8.7, VGE = 15V, Resistive Load, TC = 125C VCE = 200 V, IC =25A, VGE = 15V -----------35 140 120 140 35 140 130 280 112 14 50 ---350 ----168 21 75 ns ns ns ns ns ns ns ns nC nC nC
FGPF120N30 Rev. A
2
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FGPF120N30 300V, 120A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120 20V 15V 12V T C = 25 C
100
o
Figure 2. Typical Output Characteristics
120 20V 15V 12V 10V T C = 125 C
o
100
Collector Current, IC [A]
80
10V
Collector Current, IC [A]
80
8V
60
8V
60
40
40
20 V GE= 6V 0 0 1 2 3 4 5 6
20 V GE = 6V 0 0 1 2 3 4 5 6
Collector-Emitter Voltage, V CE [V]
C ollector-E m itter V oltage, V C E [V ]
Figure 3 Typical Saturation Voltage Characteristics
120 C o m m o n E m itter V Ge = 1 5 V Tc = 25 C o Tc = 125 C
o
Figure 4. Transfer Characteristics
120 V CE = 2 0 V
100
100
Collector Current, IC [A]
Collector Current, IC [A]
80
80
60
60 125 C 25 C 20
o o
40
40
20
0 0 1 2 3
0 0 2 4 6 8 10 12
C o llector-E m itte r V o lta ge , V C E [V ]
G ate -E m itte r V olta ge, V G E [V ]
Figure 5. Saturation Voltage vs Case Temperature at Variant Current Level
2.2 2.0 120A
Figure 6. Saturation Voltage vs. Vge
6 C om m on E m itter o TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V
CE
1.8 1.6 1.4 1.2 25A 1.0 0.8 0.6 0 25 50 75 100
o
[V]
50A
5
4
3
120A
2 25A 1 12.5A
50A
I c = 12.5A
125
150
0 6 8 10 12 14 16 18 20
C ase Tem perature, T C ( C )
G ate - E m itter V oltage, V G E [V ]
FGPF120N30 Rev. A
3
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FGPF120N30 300V, 120A PDP IGBT
Figure 7. Saturation Voltage vs. Vge
6 C o m m o n E m itte r o TC = 125 C
Figure 8. Capacitance Characteristics
Cies
CE
[V]
5
Capacitance [pF]
Collector - Emitter Voltage, V
4
1000 Coes
3
120A
Cres
2 25A 1 1 2 .5 A 0 6 8
50A
100
Com m on Em itter V GE = 0V, f = 1M Hz T C = 25 C
o
10
12
14
16
18
20
0
5
10
15
20
25
30
G a te - E m itter V oltage, V G E [V ]
C ollector-Emitter Voltage, V CE [V]
Figure 9. Gate Charge
15 C o m m o n E m itte r RL = 10 ohm TC = 25 C
o
Figure 10. SOA Characteristics
Gate-Emitter Voltage, VGE [V]
100
Ic M A X (P u ls e d ) Ic M A X (C o n tin u o u s ) 50s 100s 1m s
*
10 Vcc = 200V
Collector Current, Ic [A]
10 D C O p e ra tio n
5
1 S in g le N o n re p e titiv e o P u ls e T c = 2 5 C C u rv e s m u s t b e d e ra te d lin e a rly w ith in c re a s e in te m p e ra tu re 0 .1 1 10 100 1000
0 0 20 40 60 80 100 120
0 .1
G ate C harge, Q g [nC ]
C o lle c to r - E m itte r V o lta g e , V C E [V ]
Figure 11. Turn-On Characteristics vs. Gate Resistance
1000
Com m on Em itter V C C = 200V, V GE = 15V I C = 25A T C = 25 C T C = 125 C
o o
Figure 12. Turn-Off Characteristics Gate Resistance
Com m on Em itter V C C = 200V, V GE = 15V
1000
I C = 25A T C = 25 C T C = 125 C
o o
Switching Time [ns]
100 td(on)
Switching Time [ns]
tr
tf tf 100 td(off)
10 1 10 100
1
10
100
Gate Resistance, R G [ ]
Gate Resistance, R G [ ]
FGPF120N30 Rev. A
4
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FGPF120N30 300V, 120A PDP IGBT
Figure 13 Turn-On Characteristics vs. Collector Current
1000 Com m on Em itter V GE = 15V, R G = 10 T C = 25 C T C = 125 C
o o
Figure 14. Turn-Off Characteristics vs. Collector Current
1000
tf
Switching Time [ns]
Switching Time [ns]
tf 100
100 tr
td(off)
td(on) 10 10 100
Com m on Em itter V GE = 15V, R G = 8.7 T C = 25 C 10 T C = 125 C 10 100
o o
C ollector Current , Ic [A]
Collector Current , Ic [A]
Figure 15. Switching Loss vs. Gate Resistance
1000
Figure 16. Switching Loss vs. Collector Current
Eoff
1000
Switching Loss [uJ]
100
Eon
Switching Loss [uJ]
Eoff 100 Eoff Com m on Em itter V GE = 15V, R G = 8.7 T C = 25 C
o
Com m on Em itter V CC = 200V, V GE = 15V IC = 25A T C = 25 C 10 1 10 T C = 125 C 100
o o
Eon
10 10
T C = 125 C 100
o
Gate Resistance, R G [ ]
Collector Current , Ic [A]
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
0 .1
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0 .0 1
1 E -3 1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c ta n g u la r P u ls e D u r a tio n [s e c ]
FGPF120N30 Rev. A
5
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FGPF120N30 300V, 120A PDP IGBT
Mechanical Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
FGPF120N30 Rev. A
6
15.87 0.20
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FGPF120N30 300V, 120A PDP IGBT
TRADEMARKS
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I17
7 FGPF120N30 Rev. A
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