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FGP90N30 300V, 90A PDP IGBT
January 2006
FGP90N30 300V, 90A PDP IGBT
Features
* * * * High Current Capability Low saturation voltage : VCE(sat) = 1.1 V @ IC = 20A High input impedance Fast switching
General Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.
Application
. PDP System
C
G
1
TO-220 2.Collector 3.Emitter
1.Gate
E
Absolute Maximum Ratings
Symbol VCES VGES IC IC_pulse (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds FGP90N30 300 20 90 130 192 77 -55 to +150 -55 to +150 300 Units V V A A W W C C C
@ TC = 25C @ TC = 25C @ TC = 25C @ TC = 100C
Thermal Characteristics
Symbol RJC(IGBT) RJA Notes (1) Repetitive test , pulse width=100usec , Duty=0.5 Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.65 62.5 Units C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FGP90N30 Rev. A
FGP90N30 300V, 90A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGP90N30
Device
FGP90N30TU
Package
TO-220
Packaging Type
Rail / Tube
Qty per Tube
50ea
Max Qty per Box
-
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 300 ----0.6 ----100 250 V V/C uA nA
On Characteristics
VGE(th) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 20A, VGE = 15V IC = 90 A, VGE = 15V TC = 25C IC = 90 A, VGE = 15V TC = 125C 2.5 ---4.0 1.1 1.9 2.0 5.0 1.4 --V V V V
VCE(sat)
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1700 290 80 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200 V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 25C VCC = 200 V, IC = 20 A, RG = 10, VGE = 15V, Resistive Load, TC = 125C VCE = 200 V, IC =20A, VGE = 15V -----------30 150 110 140 30 150 110 330 87 12 38 ---350 ----130 18 57 ns ns ns ns ns ns ns ns nC nC nC
FGP90N30 Rev. A
2
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FGP90N30 300V, 90A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
20V 80 15V 12V 10V T C = 25 C
o
Figure 2. Typical Output Characteristics
20V 80 15V 12V 10V T C = 125 C
o
Collector Current, IC [A]
Collector Current, IC [A]
60 8V 40
60
8V
40
20
20 V GE= 6V
V GE = 6V
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
C ollector-Em itter Voltage, V C E [V]
C ollector-E mitter Voltage, V C E [V]
Figure 3 Typical Saturation Voltage Characteristics
80 Com m on E m itter V Ge = 15V
Figure 4. Transfer Characteristics
V CE = 20 V 80
Collector Current, IC [A]
Collector Current, IC [A]
T c = 25 C o T c = 125 C 60
o
60
40
40 125 C 20 25 C
o o
20
0 0 1 2 3
0 0 2 4 6 8 10 12
C ollector-E m itter V oltage, V C E [V ]
Gate-Emitter Voltage, V GE [V]
Figure 5. Saturation Voltage vs Case Temperature at Variant Current Level
90A 1.8
Figure 6. Saturation Voltage vs. Vge
6 C om m on E m itter o T C = 25 C
Collector-Emitter Voltage, VCE [V]
[V] Collector - Emitter Voltage, V
CE
5
1.6
4
1.4
40A
3
1.2 20A 1.0 Ic= 10A
2
90A 10A 20A 40A
1
0.8 0 25 50 75 100
o
0
125
150
6
8
10
12
14
16
18
20
Case Temperature, T C ( C)
G ate - E m itter V oltage, V G E [V ]
FGP90N30 Rev. A
3
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FGP90N30 300V, 90A PDP IGBT
Figure 7. Saturation Voltage vs. Vge
6 C om m on Em itter o T C = 125 C
Figure 8. Capacitance Characteristics
CE
[V]
5
Cies
Collector - Emitter Voltage, V
4
1000
Capacitance [pF]
3
Coes
2
90A 10A 20A 40A
Cres Com m on Em itter V GE = 0V, f = 1MHz T C = 25 C
o
1
100
0 6 8 10 12 14 16 18 20
0
5
10
15
20
25
30
G ate - Em itter V oltage, V G E [V ]
Collector-Emitter Voltage, V CE [V]
Figure 9. Gate Charge
15
Figure 10. SOA Characteristics
Ic MAX (Pulsed) 100 Ic MAX (Continuous) 100s 1ms 10 DC Operation 1 50s
Common Emitter R L = 10 ohm T C = 25 C
o
Gate-Emitter Voltage, VGE [V]
10 Vcc = 200V
5
Collector Current, Ic [A]
0.1
0 0 10 20 30 40 50 60 70 80 90
0.01 0.1
Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 1 10 100 1000
Gate Charge, Q g [nC]
Collector - Emitter Voltage, VCE [V]
Figure 11. Turn-On Characteristics vs. Gate Resistance
1000
Com m on Em itter V C C = 200V, V GE = 15V I C = 20A T C = 25 C
o
Figure 12. Turn-Off Characteristics vs. Gate Resistance
1000
C om m on Em itter V C C = 200V, V G E = 15V I C = 20A T C = 25 C
o
Switching Time [ns]
tr
Switching Time [ns]
T C = 125 C
o
T C = 125 C
o
tf
100 td(on)
tf 100 td(off)
10 1 10 100
1 10 100
Gate Resistance, R G [ ]
Gate R esistance, R G [ ]
FGP90N30 Rev. A
4
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FGP90N30 300V, 90A PDP IGBT
Figure 13 Turn-On Characteristics vs. Collector Current
1000 Common Emitter V GE = 15V, R G = 10 T C = 25 C
o
Figure 14. Turn-Off Characteristics vs. Collector Current
1000
Switching Time [ns]
Switching Time [ns]
T C = 125 C
o
tf
tr 100
tf 100 td(off)
td(on)
Com m on Em itter V GE = 15V, R G = 10 T C = 25 C
10 10 100
o
10
T C = 125 C 10 100
o
Collector Current , Ic [A]
Collector Current , Ic [A]
Figure 15. Switching Loss vs. Gate Resistance
1000
Figure 16. Switching Loss vs. Collector Current
Eoff
1000
100
Eon
Switching Loss [uJ]
Switching Loss [uJ]
Eoff 100 Eoff Com m on Em itter V GE = 15V, R G = 10 T C = 25 C
o
Common Emitter V CC = 200V, V GE = 15V IC = 20A T C = 25 C 10 1 10 T C = 125 C 100
o o
Eon
10 10
T C = 125 C 100
o
Gate Resistance, R G [ ]
Collector Current , Ic [A]
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0 .5 0 .2
0 .1
0 .1 0 .0 5 0 .0 2 s in g le p u ls e
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0 .0 1
0 .0 1
1 E -3 1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
FGP90N30 Rev. A
5
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FGP90N30 300V, 90A PDP IGBT
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FGP90N30 Rev. A
6
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FGP90N30 300V, 90A PDP IGBT
TRADEMARKS
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I17
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
7 FGP90N30 Rev. A
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