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FDZ298N
February 2004
FDZ298N
N-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Features
* 6 A, 20 V RDS(ON) = 27 m @ VGS = 4.5 V RDS(ON) = 39 m @ VGS = 2.5 V
* Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 * Ultra-thin package: less than 0.80 mm height when mounted to PCB * Outstanding thermal transfer characteristics: 4 times better than SSOT-6 * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability.
Applications
* Battery management * Battery protection
D
D S S
D
P in 1
D
C
S G
S S
G
Bottom
Top
TA=25oC unless otherwise noted
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
20 12
(Note 1a)
Units
V V A W C
6 10 1.7 -55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
72
C/W
Package Marking and Ordering Information
Device Marking C Device FDZ298N Reel Size 7" Tape width 8mm Quantity 3000 units
(c)2004 Fairchild Semiconductor Corporation
FDZ298N Rev B1 (W)
FDZ298N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25 unless otherwise noted C
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage.
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min Typ
20 12
Max
Units
V mV/C
Off Characteristics
ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 A 0.6
1 100 0.9 -0.3 23 28 28 10 24 680 165 90 1.9 8 7 14 6 16 14 26 12 10 27 39 42 1.5
A nA V mV/C m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
ID = 250 A,Referenced to 25C VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 4.5 V, VDS = 5 V, ID = 6 A, ID = 5A, ID = 6 A, TJ=125C VDS = 5 V ID = 6 A
ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
A S pF pF pF ns ns ns ns nC nC nC 1.4 A V nS nC
Dynamic Characteristics
VDS = 10 V, f = 1.0 MHz V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 10V, VGS = 4.5 V
ID = 6 A,
7 1.4 1.8
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.4 A
(Note 2)
0.7 14 3
1.2
IF = 6 A, diF/dt = 100 A/s
Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the
a)
72 C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
b)
157 C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDZ298N Rev B1 (W)
FDZ298N
Typical Characteristics
10
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS=4.5V
2.25 2.0V VGS = 2.0V 2 1.75 1.5 1.25 1 0.75
ID, DRAIN CURRENT (A)
8 3.5V 6 2.5V
4
2.5V 3.0V 3.5V 4.0V 4.5V
2 1.5V 0 0 0.25 0.5 0.75 1 1.25 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.075 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6.0A VGS = 10V
ID =3.0A
0.065 0.055 0.045 0.035 0.025 0.015
1.4
1.2
1
TA = 125 C
o
0.8
TA = 25 C
o
0.6 -50 -25 0 25 50 75
o
100
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
10 IS, REVERSE DRAIN CURRENT (A) VDS = 5V I D, DRAIN CURRENT (A) 8
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001
o
6 TA = 125 C 25 C
o o
TA = 125 C 25 C -55 C
o o
4
2 -55 C 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V)
o
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDZ298N Rev B1 (W)
FDZ298N
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.0A 8 CAPACITANCE (pF) VDS = 5V 6 15V 10V
960 f = 1MHz VGS = 0 V 640 Ciss
4
320
Coss
2 Crss 0 0 3 6 9 12 15 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT I D, DRAIN CURRENT (A) 10 100ms 1 DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 157 C/W TA = 25 C 0.01 0.01 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100
o o
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE RJA = 157C/W TA = 25C
1ms 10ms 1s
40
30
10s
20
10
0 0.01 0.1 1 10 t1, TIME (sec) 100 1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 P(pk) t1 t2 TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2 RqJA(t) = r(t) * RqJA RqJA = 157 C/W
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDZ298N Rev B1 (W)
FDZ298N
Dimensional Outline and Pad Layout
FDZ298N Rev B1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM
POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I7

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