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| January 2006 FDY2001PZ Dual P-Channel (- 2.5V) Specified PowerTrench(R) MOSFET FDY2001PZ Dual P-Channel (- 2.5V) Specified PowerTrench(R) MOSFET General Description This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = - 2.5v. Features * - 150 mA, - 20 V RDS(ON) = 8 @ VGS = - 4.5 V RDS(ON) = 12 @ VGS = - 2.5 V * ESD protection diode (note 3) * RoHS Compliant Applications * Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) 1a) Ratings - 20 8 - 150 - 1000 625 446 -55 to +150 Units V V mA mW C (Note 1a) 1a) (Note 1b) 1 Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) (Note 1b) 1 200 280 C/W Package Marking and Ordering Information Device Marking B Device FDY2001PZ Reel Size 7 '' Tape width 8 mm Quantity 3000units (c)2006 Fairchild Semiconductor Corporation FDY2001PZ Rev A www.fairchildsemi.com (R) (R) (R) FDY2001PZ Dual P-Channel (- 2.5V) Specified PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, (Note 2) Test Conditions VGS = 0 V, ID = - 250 A Min - 20 Typ Max Units V Off Characteristics ID = - 250 A, Referenced to 25C VDS = - 16 V, VGS = 8 V, VGS = 0 V VDS = 0 V - 0.65 - 1.0 -3 16 -3 10 - 1.5 mV/C A A V mV/C On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = - 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = - 4.5 V, VGS = - 2.5 V, VGS = - 1.8 V, VGS = - 1.5 V VGS = - 4.5 V, TJ = 125C VDS = - 5 V, VDS = - 10 V, f = 1.0 MHz ID = -150 mA ID = -125 mA ID = -100 mA ID = - 30 mA ID= - 150 mA, ID = - 150 mA V GS = 0 V, 0.7 100 30 15 8 12 15 20 12 gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) S pF pF pF 12 23 16 2 1.4 ns ns ns ns nC nC nC Dynamic Characteristics Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = - 10 V, ID = - 150 mA, VGS = - 4.5 V, RGEN = 6 6 13 8 1 VDS = - 10 V, ID = - 150 mA, VGS = - 4.5 V 1.0 0.2 0.3 Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = - 150 mA(Note 2) - 0.9 11 2 - 1.2 V ns nC IF = - 150 mA, dIF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user' board design s a) 200C/W when mounted on a 1in2 pad of 2 oz copper b) 280C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY2001PZ Rev A www.fairchildsemi.com FDY2001PZ Dual P-Channel (- 2.5V) Specified PowerTrench(R) MOSFET Typical Characteristics 1 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS= -4.5V -ID, DRAIN CURRENT (A) 0.8 -2.5V V -3.0V -2.0V 5 VGS=-1.5V 4.2 3.4 2.6 1.8 1 0.2 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0 0.2 0.4 0.6 -ID, DRAIN CURRENT (A) 0.8 1 -3.5V 0.6 -1.8V -2.0V -2.5V -3.0V 0.4 -1.8V 0.2 -1.5V 0 -3.5V -4.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.25 RDS(ON), ON-RESISTANCE (OHM) ID = -0.075A 1.75 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -0.15A VGS = -4.5V 1.4 1.2 1.25 TA = 125oC 0.75 TA = 25oC 0.25 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 1 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 0.8 VGS = 0V 0.1 0.6 0.01 TA = 125oC 0.4 TA = 125oC -55 C o 0.2 25oC 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.001 25oC -55oC 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDY2001PZ Rev A www.fairchildsemi.com FDY2001PZ Dual P-Channel (- 2.5V) Specified PowerTrench(R) MOSFET Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) 150 ID = 0.15A CAPACITANCE (pF) VDS = -5V -15V 125 100 75 50 25 Crss 0 0 0.5 1 1.5 Qg, GATE CHARGE (nC) 2 2.5 f = 1 MHz VGS = 0 V 8 6 Ciss -10V 4 Coss 2 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 8 SINGLE PULSE RJA = 280 C/W TA = 25 C 1 RDS(ON) LIMIT 10s DC 1ms 10ms 100ms 1s 6 4 0.1 VGS = -4.5V SINGLE PULSE RJA = 280oC/W TA = 25oC 2 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =280 C/W P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY2001PZ Rev A www.fairchildsemi.com FDY2001PZ Dual P-Channel (- 2.5V) Specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout 1.70 1.50 6 4 0.50 0.30 0.15 0.50 1.20 BSC 1.70 1.55 1.25 1.80 1 (0.20) 3 0.30 0.50 1.00 0.60 0.56 0.18 0.10 0.55 LAND PATTERN RECOMMENDATION SEE DETAIL A 0.35 BSC 0.20 BSC 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY2001PZ Rev A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production |
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