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| FDFC3N108 N-Channel 1.8V Specified PowerTrench(R)MOSFET with Schottky Diode May 2007 FDFC3N108 N-Channel 1.8V Specified PowerTrench(R) MOSFET with Schottky Diode General Description This N-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power solution for battery power management and DC/DC converter applications. tm Features * 3 A, 20 V RDS(ON) = 70 m @ VGS = 4.5 V RDS(ON) = 95 m @ VGS = 2.5 V * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * Battery management/Charger Application * DC/DC Conversion D2 S1 D1 A1 G2 TM 6C 5 NC 4D SuperSOT Pin 1 -6 S2 G1 S2 G3 TA=25oC unless otherwise noted SuperSOTTM-6 MOSFET Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings 20 12 3 12 0.96 0.90 0.70 Units V V A W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 20 2.0 C Schottky Diode Maximum Ratings VRRM IO Repetitive Peak reverse voltage Average Forward Current V A Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 C/W Package Marking and Ordering Information Device Marking .108 (c)2007 Fairchild Semiconductor Corporation Device FDFC3N108 Reel Size 7'' Tape width 8mm Quantity 3000 units FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench(R)MOSFET with Schottky Diode Electrical Characteristics Symbol Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) TA = 25C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 A Min Typ 20 12 Max Units V mV/C Off Characteristics BVDSS BVDSS TJ IDSS IGSS ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V 1 100 A nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 4.5 V, VDS = 5 V, ID = 3 A ID = 2.5 A ID = 3 A, TJ=125C VDS = 5 V ID = 3 A 0.5 0.9 1.5 -3 56 73 78 12 10 70 95 106 V mV/C m ID(on) gFS A S Forward Transconductance Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz VGS = 0 V, 355 85 45 2.0 pF pF pF V GS = 15 mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 6 7 20 1 12 14 36 2 4.9 ns ns ns ns nC nC nC VDS = 10V, VGS = 4.5 V ID = 3 A, 3.5 0.7 1.0 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 0.8 A (Note 2) Voltage Diode Reverse Recovery Time IF = 3 A, Diode Reverse Recovery Charge diF/dt = 100 A/s TJ = 25 oC TJ = 100 oC 363 449 0.8 1.2 12 3 A V nS nC A mA mV Schottky Diode Characteristic IR VF Reverse Leakage Forward Voltage VR = 20V IF = 1A IF = 2A 250 10 425 550 FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench(R)MOSFET with Schottky Diode Electrical Characteristics TA = 25C unless otherwise noted Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 130 C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 C/W when mounted on a .004 in2 pad of 2 oz copper c) 180 C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench(R)MOSFET with Schottky Diode Typical Characteristics 6 1.8 VGS = 4.5V 2.5V 3.0V 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 VGS = 2.0V ID, DRAIN-SOURCE CURRENT (A) 5 3.5V 4 1.4 2.5V 1.2 3.0V 3.5V 1 4.0 V 4.5 V 3 2 1 1.5V 0 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5 0.8 0 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 3.0A VGS = 4.5V ID = 1.5A 0.155 1.4 0.13 1.2 0.105 TA = 125 C o 1 0.08 0.8 0.055 TA = 25oC 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0.03 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 12 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V 10 ID, DRAIN CURRENT (A) TA = -55oC 125oC VGS = 0V IS, REVERSE DRAIN CURRENT (A) 10 8 25 C 6 o 1 TA = 125 C 25oC -55oC o 0.1 4 0.01 2 0.001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench(R)MOSFET with Schottky Diode Typical Characteristics 5 500 ID = 3.0A VGS, GATE-SOURCE VOLTAGE (V) 4 VDS = -5V -15V CAPACITANCE (pF) 400 f = 1MHz VGS = 0 V 3 -10V 300 Ciss 2 200 Coss 100 1 Crss 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 10 ID, DRAIN CURRENT (A) 1ms 1 DC 0.1 VGS = 4.5V SINGLE PULSE o RJA = 180 C/W TA = 25oC POWER (W) 10ms 100ms 1s 30 100s 40 50 Figure 8. Capacitance Characteristics. SINGLE PULSE RJA =180oC/W TA = 25oC 20 0.01 10 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 SINGLE PULSE TIME (SEC) 10 100 Figure 9. Schottky Diode Forward Voltage. 1 D = 0.5 0.2 Figure 10. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE RJA(t) = r(t) * RJA RJA = 180 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design. FDFC3N108 Rev C2 (W) tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I28 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c)2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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