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 polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance
TM
F1108
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 170 Watts Junction to Case Thermal Resistance 0.95 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
8A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 11 55 TYP
80WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdow n Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forw ard Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2 0.7 12 80 10 60 MIN 65 2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 28.0 V, Vds = 0 V, Ids = 0.2 A,
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION
8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
F1108
POUT VS PIN GRAPH
F1108 POUT VS PIN F=400 MHZ; IDQ =0.8A; VDS=28.0V
1000
CAPACITANCE VS VOLTAGE
F1J 2 DICE CAPACITANCE
90 80 70 60 50 40 30 20 10 0 0 1
15.50 14.50
100
Coss
GAIN IN DB
POUT IN WATTS
13.50 12.50 Efficiency = 55% 11.50 10.50 9.50 2 3 4 5
POUT
Ciss
10
Crss
1 0 5 10 15 20 25 30
6
GAIN
PININ WATTS
VDS IN VOLTS
IV CURVE
F1J 2 DIE IV CU RVE
ID AND GM VS VGS
F1J2 DICE ID & GM Vs VG
100.00
18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10
Vds in Volts
Id in amps; Gm in mhos
Id
10.00
1.00
gM
0.10
12 14 16 18 20
0
Vg = 8V Vg = 10V Vg = 12V
2
4
6
8
1 0
1 2
1 4
1 6
1 8
Vg = 2V
Vg = 4V
Vg = 6V
V in V gs olts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION
8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com


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