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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 390 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1020 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 130 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V -65 o C to 150o C 20 A RF CHARACTERISTICS ( 130 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficienc Load Mismatch Toleranc MIN 10 60 20:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = Idq = Idq = 2 A, Vds = 28.0 V, F = 400 MHz 2 A, Vds = 28.0 V, F = 400 MHz 2 A, Vds = 28.0 V, F = 400 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 4 0.25 27.5 165 20 100 MIN 65 5 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.25 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.5 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 20 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1020 POUT VS PIN GRAPH F1020 POUT vs PIN F=400 MHZ; IDQ=2.0A; VDS=28V 250 12 CAPACITANCE VS VOLTAGE F1B 5 DIE Capacitance vs Vds 1000 200 GAIN 11 10 150 9 100 100 POUT 8 Ciss Coss 50 Efficiency = 55% 0 0 5 10 15 20 PIN IN WATTS POUT GAIN 7 Crss 6 25 30 35 40 10 0 5 10 15 VDS IN VOLTS 20 25 30 IV CURVE F1B 5 DIE IV CURVE 35 30 25 10 20 15 1 10 5 0 0 2 4 6 8 10 Vds in Volts Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V ID AND GM VS VGS F1B_5 DICE ID & GM VS VG 100 Id Gm 0.1 12 14 16 18 20 0 2 4 6 8 10 Vgs in Volts GM ID 12 14 16 18 20 S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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