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SD10195 CZMK20V KDR41208 TDA6190T AT54A ISL976 EGP08A
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 polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F1015
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 100 Watts Gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 350 Watts Junction to Case Thermal Resistance 0.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
16 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 12 60 TYP
100WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 3.2 0.35 22 132 16 80 MIN 65 4 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.2 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 28.0 V, Vds = 0 V, Ids = 0.4 A,
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 16 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1015
POUT VS PIN GRAPH
F1015 POUT vs PIN Idq=1.6A FREQ=400Mhz Vds=28v
140 120 100 80 60 40 Efficiency = 55% 20 0 2 4 6 8
PIN IN WATTS
POUT PIN
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
13.5 13 12.5 12 11.5 11 10.5 10 100
1000
Coss
Ciss
Crss
10
12
14 10 0 5 10 15
VDS IN VOLTS
20
25
30
IV CURVE
F1B 4DIE IV CURVE
30
ID AND GM VS VGS
F1B 4 DIE GM & ID vs VGS
100
25
Id
20 10 15
10 1 5
Gm
0 0 2 4 6 8 10
Vds in Volts
12
14
16
18
20 0.1 0 2 4 6
Vgs in Volts
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


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