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| (R) ESM4045DV NPN DARLINGTON POWER MODULE s s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE INSULATED PACKAGE (UL COMPLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: MOTOR CONTROL s SMPS & UPS s DC/DC & DC/AC CONVERTERS s WELDING EQUIPMENT s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CEV Collector-Emitter Voltage (V BE = -5 V) V CEO(sus) Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC Collector Current I CM Collector Peak Current (t p = 10 ms) IB Base Current I BM Base Peak Current (t p = 10 ms) P tot Total Dissipation at T c = 25 o C T stg Storage Temperature Tj Max. Operating Junction Temperature Value 600 450 7 42 63 4 8 150 -55 to 150 150 Unit V V V A A A A W o C o C September 2003 1/8 ESM4045DV THERMAL DATA R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.83 1.5 0.05 o o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER # I CEV # I EBO # Parameter Collector Cut-off Current (R BE = 5 ) Collector Cut-off Current (V BE = -5) Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 mH V clamp = 450 V I C = 35 A IC IC IC IC = = = = 25 25 35 35 A A A A V CE = 5 V IB IB IB IB = = = = 0.5 A 0.5 A T j = 100 o C 2A 2A T j = 100 o C T j = 100 o C 200 450 T j = 100 o C T j = 100 o C Min. Typ. Max. 1.5 20 1 13 1 Unit mA mA mA mA mA V V CEO(SUS) * Collector-Emitter Sustaining Voltage (I B = 0) h FE V CE(sat) DC Current Gain Collector-Emitter Saturation Voltage 220 1.15 1.3 1.4 1.5 2.3 2.3 250 4.5 2.5 3.2 0.25 0.75 450 8 4.5 5 0.5 1.5 2 2 3 V V V V V V A/s V V s s s V V BE(sat) di C /dt Base-Emitter Saturation Voltage Rate of Rise of On-state Collector I C = 35 A I C = 35 A IB = 2 A IB = 2 A V CC = 300 V I B1 = 0.75 A V CC = 300 V I B1 = 0.75 A V CC = 300 V I B1 = 0.75 A I C = 25A V BB = -5 V V clamp = 450 V L = 0.1 mH I CWoff = 42 A V BB = -5 V L = 0.06 mH T j = 125 o C I F = 35 A RC = 0 t p = 3 s T j = 100 o C R C = 12 T j = 100 o C R C = 12 T j = 100 o C V CC = 50 V R BB = 0.6 I B1 = 0.5 A T j = 100 o C I B1 = 2 A V CC = 50 V R BB = 0.6 T j = 100 o C V CE (3 s) Collector-Emitter Dynamic Voltage VCE (5 s) Collector-Emitter Dynamic Voltage ts tf tc V CEW Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage Without Snubber Diode Forward Voltage Reverse Recovery Current VF I RM 1.5 20 1.85 24 V A V CC = 200 V I F = 35 A di F /dt = -200 A/s L < 0.05 H T j = 100 o C Pulsed: Pulse duration = 300 s, duty cycle 1.5 % To evaluate the conduction losses of the diode use the following equations: P = 1.5 IF(AV) + 0.001 I2F(RMS) VF = 1.5 + 0.001 IF # See test circuits in databook introduction 2/8 ESM4045DV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/8 ESM4045DV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/8 ESM4045DV Dc Current Gain Typical VF Versus IF Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit Turn-on Switching Waveforms 5/8 ESM4045DV Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode 6/8 ESM4045DV ISOTOP MECHANICAL DATA DIM. MIN. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S 14.9 12.6 3.5 4.1 4.6 4 4 30.1 11.8 8.9 7.8 0.75 1.95 37.8 31.5 25.15 23.85 24.8 15.1 12.8 4.3 4.3 5 4.3 4.4 30.3 0.586 0.496 0.137 0.161 0.181 0.157 0.157 1.185 mm TYP. MAX. 12.2 9.1 8.2 0.85 2.05 38.2 31.7 25.5 24.15 MIN. 0.465 0.350 0.307 0.029 0.076 1.488 1.240 0.990 0.938 0.976 0.594 0.503 1.169 0.169 0.196 0.169 0.173 1.193 inch TYP. MAX. 0.480 0.358 0.322 0.033 0.080 1.503 1.248 1.003 0.950 P093A 7/8 ESM4045DV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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