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| CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) Spec. No. : C354N3 Issued Date : 2003.06.25 Revised Date : Page No. : 1/4 DTC114WN3 Features * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. * Only the on/off conditions need to be set for operation, making device design easy. * Complements the DTA114WN3 Equivalent Circuit DTC114WN3 Outline SOT-23 R1=10k , R2=4.7 k IN(B) : Base OUT(C) : Collector GND(E) : Emitter Absolute Maximum Ratings (Ta=25C) Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Symbol VCC VI IO IO(max.) Pd Tj Tstg Limits 50 -10~+30 100 100 200 150 -55~+150 Unit V V mA mA mW C C DTC114WN3 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25C) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. 3 24 7 0.37 Typ. 10 0.47 250 Max. 0.8 0.3 0.88 0.5 13 0.57 Unit V V V mA A k MHz Spec. No. : C354N3 Issued Date : 2003.06.25 Revised Date : Page No. : 2/4 Test Conditions VCC=5V, IO=100A VO=0.3V, IO=2mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device Characteristic Curves DC Current Gain vs Output Current 1000 Output Voltage---Vo(on)(mV) 1000 Output Voltage vs Output Current Current Gain---HFE 100 Vo=5V 100 Io/Ii=20 10 1 10 Output Current ---Io(mA) Input Voltage vs Output Current (ON Characteristics) 10 Input Voltage --- Vi(on)(V) Output Current --- Io(mA) Vo=0.3V 10 100 1 10 Output Current ---Io(mA) Output Current vs Input Voltage (OFF Characteristics) 100 Vcc=5V 100 10 1 1 0.1 1 10 100 Output Current --- Io(mA) 0.1 0.1 1 Input Voltage --- Vi(off)(V) 10 DTC114WN3 CYStek Product Specification CYStech Electronics Corp. Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta( ) Spec. No. : C354N3 Issued Date : 2003.06.25 Revised Date : Page No. : 3/4 DTC114WN3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C354N3 Issued Date : 2003.06.25 Revised Date : Page No. : 4/4 A L 3 B 1 2 S Marking: 8W V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector J C D K H *:Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC114WN3 CYStek Product Specification |
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