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| DSSK 50-015A Power Schottky Rectifier with common cathode Preliminary Data IFAV = 2x25 A VRRM = 150 V V F = 0.68 V VRSM V 150 VRRM V 150 Type A C A TO-247 AD DSSK 50-015A A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol IFRMS IFAV IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight Conditions TC = 150C; rectangular, d = 0.5 TC = 150C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = tbd A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive Maximum Ratings 70 25 50 450 tbd tbd 18 -55...+175 175 -55...+150 A A A A mJ A kV/s C C C W Nm g Features * * * * * International standard package Very low VF Extremely low switching losses Low IRM-values Epoxy meets UL 94V-0 Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses TC = 25C mounting torque M3 typical 135 0.8...1.2 6 Symbol IR VF Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 25 A; IF = 25 A; IF = 50 A; TVJ = 125C TVJ = 25C TVJ = 125C Characteristic Values typ. max. 1.5 10 0.68 0.81 0.81 1.1 0.25 mA mA V V V K/W K/W Dimensions see Outlines.pdf RthJC RthCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 228 1-2 (c) 2003 IXYS All rights reserved DSSK 50-015A 100 A IF IR 1 125C 100 mA 10 TVJ=175C 150C 10000 pF CT 10 0.1 100C 75C TVJ = 175C 150C 125C 25C 1000 0.01 50C D2 TVJ= 25C 0.001 25C 0.0001 100 80 0 20 40 60 80 100 120 140 V VR 0 1 .0 0.2 0.4 0.6 0.8 1.0 V 1.2 VF 20 40 60 80 100 120 140 V VR Fig. 1 Maximum forward voltage drop characteristics 80 A 60 IF(AV) 40 d = 0.5 DC Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 60 W 50 P(AV) 40 30 20 d= DC 0.5 0.33 0.25 0.17 0.08 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 10000 A IFSM 1000 20 10 0 0 50 100 TC 150 C 200 0 0 10 20 30 40 50 IF(AV) 60 A 100 10 100 1000 s 10000 tP Fig. 4 Average forward current IF(AV) versus case temperature TC 10 K/W Fig. 5 Forward power loss characteristics 1 ZthJC D = 0.5 0.33 0.25 0.17 0.08 0.1 Single Pulse 0.01 0.0001 DSSK 50-015A 0.001 0.01 0.1 t s 1 Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 228 (c) 2003 IXYS All rights reserved 2-2 |
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