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| dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers Al / 0.5% Cu / 0.8% Si 0.6 m DS1208 Standard Process Gate Ox Thickness: Cf: Ea: : 60% 0.7 1 160 A Passivation: 55 5.5 C Volts TEOS Oxide - Nitride Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage Tuse: Vuse: DESCRIPTION INFANT LIFE HIGH VOLTAGE LIFE VEHICLE DS12885 REV DATE CODE C1 C1 C1 C1 C1 C1 C1 C1 C1 C1 C1 C2 C2 C2 C2 C2 C2 C2 C2 9804 9804 9804 9804 9807 9807 9807 9807 9752 9752 9752 9808 9808 9808 9832 9832 9832 9835 9835 CONDITION 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 150C, 6.0 VOLTS 150C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS READPOINT 48 336 1000 1500 48 336 1000 1500 48 336 528 48 48 336 48 336 1000 48 336 HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS QUANTITY 429 153 153 153 429 153 153 153 399 200 200 200 419 419 195 195 194 370 80 FAILS FILE # DEVICE HRS 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 22411 0 0 2646132 6606079 13054870 9830474 2646132 6606079 13054870 9830474 2461088 8635397 4934513 1233628 8634985 51809909 1202787 7216725 16553234 2282212 3454159 HIGH TEMPERATURE OPERATING LIFE INFANT LIFE HIGH VOLTAGE LIFE DS12885 INFANT LIFE HIGH VOLTAGE LIFE DS2401 HIGH VOLTAGE LIFE DS2401 HIGH VOLTAGE LIFE DS2401 INFANT LIFE OP-LIFE DS2401 Wednesday, January 26, 2000 dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers Al / 0.5% Cu / 0.8% Si 0.6 m DS1208 Standard Process Gate Ox Thickness: Cf: Ea: : 60% 0.7 1 160 A Passivation: 55 5.5 C Volts TEOS Oxide / Nitride Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage Tuse: Vuse: DESCRIPTION OP-LIFE INFANT LIFE OP-LIFE VEHICLE DS2401 DS2401 REV DATE CODE C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 9835 9841 9841 9841 9841 9842 9842 9842 9842 9851 9851 9851 9853 9853 9853 9853 9853 9853 9902 9902 CONDITION 125C, 6.0 VOLTS 125C, 7.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 7.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS READPOINT 1000 48 336 1000 2000 48 336 1000 2000 48 336 1000 48 336 1000 48 336 1000 48 336 HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS QUANTITY 80 195 115 115 110 195 115 115 115 234 77 77 80 80 80 75 75 75 114 113 FAILS FILE # DEVICE HRS 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 22990 0 0 0 0 6826076 3269515 4965353 9812484 14135323 3269515 4965353 9812484 14777837 1443345 3324628 6570098 493451 2960708 6826076 462611 2775663 6399446 703168 4181999 INFANT LIFE OP-LIFE DS2401 INFANT LIFE HIGH VOLTAGE LIFE DS2401 OP-LIFE DS2401 HIGH VOLTAGE LIFE DS2401 Wednesday, January 26, 2000 dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers Al / 0.5% Cu / 0.8% Si 0.6 m DS1208 Standard Process Gate Ox Thickness: Cf: Ea: : 60% 0.7 1 160 A Passivation: 55 5.5 C Volts TEOS Oxide / Nitride Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage Tuse: Vuse: DESCRIPTION HIGH VOLTAGE LIFE VEHICLE DS2401 REV DATE CODE C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 C2 B1 9902 9902 9902 9902 9902 9902 9902 9902 9902 9921 9926 9926 9926 9928 9928 9928 9928 9943 9943 9822 CONDITION 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS READPOINT 1000 48 336 1000 48 336 1000 48 48 48 48 336 1000 48 168 48 168 48 336 48 HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS QUANTITY 113 116 116 116 116 115 115 116 116 97 234 77 77 550 01/08/2000 571 01/14/2000 250 77 253 FAILS FILE # DEVICE HRS 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 9641832 715504 4293026 9897810 715504 4256017 9812484 715504 715504 598310 1443345 3324628 6570098 3392477 3522008 INFANT LIFE INFANT LIFE HIGH VOLTAGE LIFE DS2401 DS2401 HIGH VOLTAGE LIFE DS2401 INFANT LIFE HIGH VOLTAGE LIFE HIGH VOLTAGE LIFE DS2401 0 0 0 1542035 3324628 1560540 DS2405 Wednesday, January 26, 2000 dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers Al / 0.5% Cu / 0.8% Si 0.6 m DS1208 Standard Process Gate Ox Thickness: Cf: Ea: : 60% 0.7 1 160 A Passivation: 55 5.5 C Volts TEOS Oxide / Nitride Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage Tuse: Vuse: DESCRIPTION HIGH VOLTAGE LIFE VEHICLE DS2405 REV DATE CODE B1 B1 A1 A1 A1 A1 A1 A1 A1 A1 9822 9822 9740 9740 9740 9749 9749 9749 9749 9917 CONDITION 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS READPOINT 336 1000 48 336 1000 48 336 1000 1500 48 HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS HOURS QUANTITY 253 253 769 116 116 766 116 116 116 192 FAILS FILE # DEVICE HRS 0 0 0 0 0 0 0 0 0 0 9363238 21587465 4743300 5008530 9897810 4724796 5008530 9897810 7453170 1184283 INFANT LIFE HIGH VOLTAGE LIFE DS2409 INFANT LIFE HIGH VOLTAGE LIFE DS2409 OP-LIFE DS2415 DEVICE HRS: 4.26E+08 TOTALS: FAILURE RATE (Fits): 2 7 Wednesday, January 26, 2000 dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers Al / 0.5% Cu / 0.8% Si 0.6 m DS1208 Standard Process Gate Ox Thickness: Cf: Ea: : 60% 0.7 1 160 A Passivation: 55 5.5 C Volts TEOS Oxide / Nitride Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage Tuse: Vuse: DESCRIPTION File # 22411 22990 VEHICLE REV DATE CODE FAILURE MECHANISM CONDITION READPOINT CORRECTIVE ACTION IN PROCESS IN PROCESS QUANTITY FAILS FILE # DEVICE HRS FAILURE MODE PREFUNCTIONAL PREFUNCTIONAL SUSPECT GATE OXIDE SUSPECT GATE OXIDE DEVICE DS12885 DS2401 DS2401 DS2405 DS2409 DS2415 REV C1 C1 C2 B1 A1 A1 DIE SIZE (x) 99 54 54 53 76 56 DIE SIZE (y) 122 28 28 34 75 45 No. of Transistors 16100 2371 2371 0 3600 4830 Wednesday, January 26, 2000 |
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