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 DME 150
150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and ouput prematch for broadband capabilit. Low thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE 55AY, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 290 Watts 55 Volts 4.0 Volts 15 Amps - 65 to + 150 oC + 150 oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg c VSWR BVebo BVces Cob hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown Capacitance Collector to Base DC - Current Gain Thermal Resistance TEST CONDITIONS F = 1025-1150 MHz Vcc = 50 Volts PW = 10 sec DF = 1% F = 1090 MHz Ie = 15 mA Ic = 25 mA Vcb = 50 Volts Ic = 250 mA, Vce = 5 V MIN 150 25 7.8 8.3 40 20:1 4.0 55 20 0.6
o
TYP
MAX
UNITS Watts Watts dB %
Volts Volts pF C/W
jc
2
Note 1: At rated output power and pulse conditions 2: At rated pulse conditions
Initial Issue June 1, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
DME150


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