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DIM800NSM33-A000
DIM800NSM33-A000
Single Switch IGBT Module Preliminary Information
Replaces August 2001, version DS5486-1.4 DS5486-2.0 October 2001
FEATURES
s s s s
KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) (max) (max) 3300V 3.2V 800A 1600A
External connection C1 Aux C C2
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
APPLICATIONS
s s s s
High Reliability Inverters Motor Controllers Traction Drives Choppers
The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800NSM33-A000 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
G Aux E E1 E2
External connection Fig. 1 Single switch circuit diagram
C1 E1 E2 G C1
ORDERING INFORMATION
Order As: DIM800NSM33-A000 Note: When ordering, please use the whole part number.
E2 - Aux Emitter C1 - Aux Collector
E2
C2
Outline type code: N (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (Diode arm) Isolation voltage - per module Partial discharge - per module Tcase = 80C 1ms, Tcase = 115C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS VGE = 0V Test Conditions Max. 3300 20 800 1600 9.6 320 6000 10 Units V V A A kW kA2s V pC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 33mm 20mm 175 Parameter Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per switch) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 6 26 C/kW C/kW C/kW Min. Typ. Max. 13 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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DIM800NSM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 80mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 800A IF = 800A, Tcase = 125C Cies Cres LM RINT SCData Input capacitance Reverse transfer capacitance Module inductance Internal transistor resistance Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 2500V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 I1 I2 Min. 4.5 Typ. 5.5 3.2 4.0 800 1600 2.5 2.5 180 10 11 0.135 5200 4400 Max. 4 60 8 6.5 Units mA mA A V V V A A V V nF nF nH m A A
Note: L* is the circuit inductance + LM
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy IF = 800A, VCE = 1800V, dIF/dt = 4400A/s Test Conditions IC = 800A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) = 2.2 Cge = 150nF L ~ 100nH Min. Typ. 1600 200 850 500 300 1000 24 450 650 500 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy Test Conditions IC = 800A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) = 2.2 Cge = 150nF L ~ 100nH IF = 800A, VCE = 1800V, dIF/dt = 3000A/s Min. Typ. 1800 250 1000 500 300 1300 670 670 850 Max. Units ns ns mJ ns ns mJ C A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-A000
TYPICAL CHARACTERISTICS
1600 Common emitter. Tcase = 25C 1400
1600 Common emitter. Tcase = 125C 1400
1200
1200 Collector current, IC - (A)
Collector current, IC - (A)
1000
1000
800
800
600
600
400 VGE = 20V VGE = 15V VGE = 12V VGE = 10V 1 2 3 4 Collector-emitter voltage, Vce - (V) 5 6
400 VGE = 20V VGE = 15V VGE = 12V VGE = 10V 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 Collector-emitter voltage, Vce - (V) 7.5 8
200
200
0 0
0
Fig. 3 Typical output characteristics
1400 Conditions: Tcase = 125C Rg = 2.2 Ohms 1200 Vcc = 1800V Cge = 150nF 1000
Fig. 4 Typical output characteristics
2000 Conditions: Tcase = 125C 1800 I = 800A C Vcc = 1800V 1600 Cge = 150nF
Switching energy, Esw - (mJ)
Switching energy, Esw - (mJ)
1400 1200 1000 800 600 400
800
600
400
200
Eon Eoff Erec 200 400 600 Collector current, Ic - (A) 800 1000
200 0 2
Eon Eoff Erec 2.5 3 3.5 4 Gate resistance, Rg - (Ohms) 4.5 5
0 0
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-A000
1600 Tj = 25C Tj = 125C 1400
1800 1600 1400 Chip
Collector current, IC - (A)
1200
Forward current, IF - (A)
1200 1000 800 600 400 200 Tcase = 125C Vge = 15V Rg(min) = 2.2 0 0 500 1000 1500 2000 2500 Collector emitter voltage, Vce - (V)
1000
Module
800
600
400
200
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward voltage, VF - (V)
3000
3500
Fig. 7 Diode typical forward characteristics
1400
10000
Fig. 8 Reverse bias safe operating area
1200
1000
Reverse recovery current, Irr - (A)
1000
Collector Current, IC - (A)
tp = 1
tp
tp
= 10 0
=
s
50
s
800
100
m
s
600
10 IC(max) DC
400
1
200
Tvj = 125C, Tc = 80C 10 100 1000 Collector emitter voltage, Vce - (V) 10000
0 0
500
1000 1500 2000 2500 Reverse voltage, VR - (V)
3000
3500
0 1
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-A000
100
1400
Transient thermal impedance, Zth (j-c) - (C/kW )
Diode Transistor 10
1200 DC collector current, IC - (A)
10
1000
800
600
1
400
1 0.3747 0.0876 0.7386 0.0843 2 1.9652 3.7713 3.9115 3.7205 3 2.7777 33.5693 5.5628 33.2138 1 4 8.4016 236.8023 16.8308 236.5275
IGBT Diode 0.1 0.001
Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01
200
0.1 Pulse width, tp - (s)
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig. 11 Transient thermal impedance
Fig. 12 DC current rating vs case temperature
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-A000
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
62 20 20 62
C1
48.8
10.35
E2
10.65
24.5
G
E2
C2
E2 - Aux Emitter C1 - Aux Collector 6x M4
40 45.2
20
4x M8
38 28
5 140 Main Terminal screw plastic hole depth (M8) = 16.8 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9 0.3 Copper terminal thickness, Main Terminal pins = 1.5 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 0.1 Nominal weight: 1050g Module outline type code: N
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
31.5
43.5 57 65
6x O7
18
57
65
E1
C1
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DIM800NSM33-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5486-2 Issue No. 2.0 August 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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