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| DCR504ST DCR504ST Phase Control Thyristor Advance Information Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001 FEATURES s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free KEY PARAMETERS VDRM IT(AV) ITSM dVdt dI/dt 1400V 456A 6800A 1000V/s 700A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s DC Motor Control VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 1400 1300 1200 1100 1000 Conditions DCR504ST14 DCR504ST13 DCR504ST12 DCR504ST11 DCR504ST10 Tvj = 0 to 125C, IDRM = IRRM = 30mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: T See Package Details for further information. Fig. 1 Package outline Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR504ST12 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DCR504ST CURRENT RATINGS Tcase = 60C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 456 717 655 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 322 505 425 A A A CURRENT RATINGS Tcase = 80C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 355 557 495 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 248 390 310 A A A 2/8 www.dynexsemi.com DCR504ST SURGE RATINGS Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 5.5 150x 103 6.8 231 x 103 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 4.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 4.0 125 125 5.0 o Min. dc Anode dc - Max. 0.063 0.11 0.147 0.02 0.04 135 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/8 www.dynexsemi.com DCR504ST DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. Gate open circuit. From 67% VDRM to 700A Gate source 10V, 5 tr 0.5s, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 20V, 10 dIG/dt = 20A/s, Tj = 25oC Tj = 25oC, VD = 10V Tj = 25oC, Rg-k = Repetitive 50Hz Non-repetitive Typ. Max. 30 1000 350 700 1.05 0.8 0.8 200 30 Units mA V/s A/s A/s V m s mA mA s dI/dt Rate of rise of on-state current VT(TO) rT tgd IL IH tq Threshold voltage On-state slope resistance Delay time Latching current Holding current Turn-off time IT = 300A, tp = 1ms, Tj = 125C, VR = 50V, dIRR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear. 300 - GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, gate characteristics curve Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At 67% VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.0 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W 4/8 www.dynexsemi.com DCR504ST CURVES 2000 Measured under pulse conditions Tj = 125C 1000 d.c. Half wave 800 Instantaneous on-state current, IT - (A) 1500 Mean power dissipation - (W) 3 phase 600 6 phase 1000 400 500 200 0 1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V) 2.5 0 0 200 400 600 Mean on-state current, IT(AV) - (A) 800 Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT A = 0.351375 B = 0.171814 C = 0.000964 D = -0.020616 these values are valid for Tj = 125C for IT 500A to 1800A Where 5/8 www.dynexsemi.com DCR504ST 10000 IT QR tp dIT/dt 0.25xIRM Conditions: Tj = 125C VR = 50V tp = 1ms 100 0W 10 W 50 IRM 20 W 10 Recovered charge, QR - (C) Gate trigger voltage, VGT - (V) 5W W 10 limit 95% IT = 300A 1000 r Uppe 1 Region of certain triggering VGD e Low r lim it 5% 100 0.1 1.0 10 Rate of decay of on-state current, dIT/dt - (A/s) 100 0.1 0.001 0.01 0.1 Tj = 125C Tj = 25C Tj = -40C 1 10 IFGM Gate trigger current, IGT - (A) Fig.4 Recovered charge 20 1.0 Fig.5 Gate characteristics I2t = I2 x t 2 Peak half sine wave on-state current - (kA) 15 Thermal impedance - (C/W) Anode side cooled 0.1 Double side cooled 10 150 I2t value - (A2s x 103) 0.01 Conduction Effective thermal resistance Junction to case C/W Double side 0.063 0.073 0.093 0.112 Anode side 0.11 0.12 0.14 0.16 I2t 5 100 0.001 0.001 d.c. Halfwave 3 phase 120 6 phase 60 0 1 ms 10 1 2 3 45 10 50 20 30 50 0.01 0.1 Time - (s) 1 10 Cycles at 50Hz Duration Fig.6 Maximum (limit) transient thermal impedance junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase 125C) 6/8 www.dynexsemi.com DCR504ST PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole 3.6 x 2.0 deep (in both electrodes) 6.3 Cathode tab Cathode O 42 max O19nom O1.5 Gate O19nom Anode Nominal weight: 55g Clamping force: 4.5kN 10% Lead length: 205mm Lead terminal connector: M4 ring Package outine type code: T 15.0 14.0 7/8 www.dynexsemi.com DCR504ST POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4448-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 www.dynexsemi.com |
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