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| DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS DCR106-3 THRU DCR106-8 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 4.0 Amperes Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-126 .304(7.72) .285(7.52) .105(2.66) .095(2.41) Pinning 1 = Cathode, 2 = Anode, 3 = Gate .041(1.05) .037(0.95) .154(3.91) .150(3.81) .055(1.39) .045(1.14) .152(3.86) .138(3.50) Absolute Maximum Ratings(TA=25oC) Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage DCR106-3 DCR106-4 DCR106-6 DCR106-8 Symbol VDRM, VRRM IT(RMS) ITSM IGM PGM PG(AV) TJ TSTG Rating 100 200 400 600 4.0 25 1.0 0.5 0.1 -40 to +110 -40 to +150 Unit V .279(7.09) .275(6.99) 1 23 3 Typ .052(1.32) .048(1.22) 3 Typ o o On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature .620(15.75) .600(15.25) A A A W W o o .032(0.81) .028(0.71) .189(4.80) .171(4.34) .022 Typ (0.55) 3 Typ o 3 Typ o C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic Peak Repetitive Forward or Reverse Off-State Blocking Current Peak Forward On-State Voltage Continuous DC Gate Trigger Current Continuous DC Gate Trigger Voltage DC Holding Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol TJ=25oC TJ=110oC IDRM, IRRM VTM IGT VGT IH dv/dt Tgt RJC Min Typ 8.0 2.2 3.0 Max 10 200 2.0 200 0.8 5.0 Unit A V A V mA V/S sec o Test Conditions VAK=Rated VDRM or VRRM RGK=1K ITM=4A Peak VAK=7V DC, RL=100 VAK=7V DC, RL=100 RGK=1K RGK=1K IGT=10mA - Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-on Time(tD+tR) Thermal Resistance, Junction to Case C/W |
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