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| MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR20EY OUTLINE DRAWING Dimensions in mm 3 (22) 2 1 1 3 3.5 3 1.5 1.6 TYPE NAME M6x1 LOCK WASHER NUT * IT (AV) ......................................................................... 20A * VDRM .................................................... 400V/600V/800V * IGT ..........................................................................50mA APPLICATION Inverter, DC choppers, pulse generator MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Voltage class 8 400 480 400 480 12 600 720 600 720 SOLDERLESS TERMINAL TELEGRAPH WIRE 2.63~6.64mm2 Note: Mica washer and spacer are provided only upon request. 16 800 850 800 800 11 2 2.1 3 4.4 1 CATHODE 2 ANODE 3 GATE 14 14 25.5 Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- -- Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mounting torque Weight Typical value Conditions Commercial frequency, sine half wave, 180 conduction, Tc=74C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current VD=1/2VDRM, ITM=60A, IG=0.1A, Tj=25C, f=60Hz Ratings 31.5 20 300 380 100 5.0 0.5 10 5 2 -30 ~ +125 -30 ~ +125 30 2.94 20 kg*cm N*m g Feb.1999 36 2 3.5 8 19 Unit V V V V Unit A A A A2s A/s W W V V A C C MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM dv/dt VGT VGD IGT tgt tq Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Turn-on time Turn-off time Thermal resistance Contact thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied Tc=25C, ITM=60A, Instantaneous value Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, IT=0.5A Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, IT=0.5A Tj=25C, VD=100V, IT=15A, IG=0.1A IT=20A, VR=50V, VD=1/2VDRM, Tj=125C, dv/dt=20V/s Junction to case Case to fin, greased Limits Min. -- -- -- 100 -- 0.25 -- -- -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 6.0 6.0 2.5 -- 3.0 -- 50 10 15 1.0 0.40 Unit mA mA V V/s V V mA s s C/W C/W PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 1.0 1.5 RATED SURGE ON-STATE CURRENT 320 SURGE ON-STATE CURRENT (A) 280 240 200 160 120 80 40 00 10 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) Tc = 125C 25C 2.0 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE CHARACTERISTICS 3 2 GATE VOLTAGE (V) TRANSIENT THERMAL IMPEDANCE (C/W) VFGM = 10V PGM = 5W 100 2 3 5 7 101 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s) 101 7 5 VGT = 3V 3 2 100 7 5 3 2 IGT Tj = 125C 25C 30C PG(AV) = 0.5W IFGM = 2A VGD = 0.25V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 80 180 90 60 = 30 CASE TEMPERATURE (C) 70 60 50 40 30 20 10 0 0 4 8 12 16 360 RESISTIVE, INDUCTIVE LOADS 20 24 28 32 120 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 40 20 0 0 = 30 60 90 120 180 360 RESISTIVE, INDUCTIVE LOADS 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 NATURAL CONVECTION 140 120 100 80 60 BX40-06 FIN 40 120 120 t3 ALUMINUM PLATE 20 PAINTED BLACK AND GREASED 0 0 2 4 6 8 10 12 14 16 18 20 AVERAGE ON-STATE CURRENT (A) = 180 90 360 RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 80 70 60 50 40 30 20 10 0 0 4 8 12 16 20 24 28 32 360 90 RESISTIVE 60 LOADS = 30 180 120 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 CASE TEMPERATURE (C) 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 = 30 60 90 120 180 AMBIENT TEMPERATURE (C) 360 RESISTIVE LOADS ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 BX40-06 FIN 120 120 t3 140 ALUMINUM PLATE PAINTED BLACK 360 120 AND GREASED RESISTIVE 100 = 180 LOADS NATURAL 80 CONVECTION = 90 60 40 20 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 80 CASE TEMPERATURE (C) 70 60 50 40 30 20 10 0 0 360 RESISTIVE, INDUCTIVE LOADS 4 8 12 16 20 24 28 32 = 30 60 180 120 90 DC 270 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 = 30 60 90 180 270 DC 120 360 RESISTIVE, INDUCTIVE LOADS AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) TURN-OFF TIME (Tj=tC) TURN-OFF TIME (Tj=125C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 BX40-06 FIN 120 120 t3 140 ALUMINUM PLATE PAINTED BLACK 360 120 AND GREASED RESISTIVE, 100 INDUCTIVE 80 DC 60 = 180 40 20 0 0 4 8 12 16 20 24 28 32 90 LOADS NATURAL CONVECTION TURN-OFF TIME VS. JUNCTION TEMPERATURE 100 (%) 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 IT = 20A, tw = 50s VR = 50V, VD = 300V dv/dt = 20V/s 80 100 120 140 160 TYPICAL EXAMPLE AVERAGE ON-STATE CURRENT (A) JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 100 (%) GATE TRIGGER CURRENT*VOLTAGE (Tj = tC) GATE TRIGGER CURRENT*VOLTAGE (Tj = 25C) TURN-OFF TIME VS. ON-STATE CURRENT 200 GATE TRIGGER CURRENT*VOLTAGE VS. JUNCTION TEMPERATURE 200 180 160 140 120 100 80 60 40 20 0 -20 0 20 40 60 80 100 120 TYPICAL EXAMPLE GATE TRIGGER VOLTAGE GATE TRIGGER CURRENT 100 (%) TURN-OFF TIME (IT = iA ) TURN-OFF TIME (IT = 20A ) 180 160 140 120 100 80 60 40 20 0 0 4 8 12 16 Tj = 125C VR = 50V di/dt = 20V/s VD = 1/2VDRM 20 24 28 32 TYPICAL EXAMPLE ON-STATE CURRENT (A) JUNCTION TEMPERATURE (C) Feb.1999 |
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