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| PROCESS CPQ057 TRIAC 2.0 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CQ92-2M CQ223-2M CQ89-2M Glass Passivated Mesa 57 x 57 MILS 8.6 MILS 0.6 MILS 28 x 16 MILS 10 x 9 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (29 -March 2005) |
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