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Reflective Photosensors (Photo Reflectors) CNB2301 Reflective Photosensor Overview CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo detector in a single resin package. Unit : mm Mark for indicating anode side C0.5 1 3 9.01.0 2.00.2 Chip center Features Ultraminiature : 2.7 x 3.4 mm Visible light cutoff resin is used High current-transfer ratio 9.01.0 2.70.2 0.4 4-0.7 4-0.5 0.1 2 1.8 4 2.00.2 0.5 0.15 Detection of paper, film and cloth Detection of rotary positioning Detection of position and edge Liquid level sensor Start, end mark detection of magnetic tape Absolute Maximum Ratings (Ta = 25C) Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC VCEO VECO PC*2 Topr 3 50 75 30 20 5 75 -25 to +85 Unit V mA mW mA V V mW C C *1 Tstg -30 to +100 Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C. Electrical Characteristics (Ta = 25C) Parameter Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current Collector current Leakage current Transfer characteristics Response time *1 I Symbol VF IR Ct ICEO ID IF = 50mA VR = 3V Conditions min Forward voltage (DC) VR = 0V, f = 1MHz VCE = 10V 0.46 VCC = 5V, IF = 2mA, RL = 100 IC*1, *2 VCC = 5V, IF = 2mA, RL = 100, d = 1mm tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100 Collector to emitter saturation voltage VCE(sat) IF = 5mA, IC = 0.5mA C classifications Class IC (mA) Q 0.46 to 1.75 R 1.3 to 4.95 S 3.15 to 12.0 *2 Output current measurement method *3 Time *4 Time ,, ,, IF IC RL VCC required for the output current to increase from 10% to 90% of its final value required for the output current to decrease from 90% to 10% of its initial value , ,, 1 23 4 Pin connection Applications 1.50.2 3.40.3 typ 1.3 0.01 30 max 1.5 10 1.0 12.0 2.0 Unit V A pF A mA A s V 150 1.5 ,, ,,, ,,, ,,, ,,, Evaporated Al Glass plate (t = 1mm) 1 CNB2301 Reflective Photosensors (Photo Reflectors) IF , IC -- Ta 60 60 IF -- VF 1.6 Ta = 25C VF -- Ta IF , IC (mA) 50 IF 50 IF = 50mA IF (mA) VF (V) 1.2 10mA Forward current, collector current 40 IC 40 30 Forward current 30 Forward voltage 1mA 0.8 20 20 0.4 10 10 0 - 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 - 40 - 20 0 20 40 60 80 100 Ambient temperature Ta (C ) Forward voltage VF (V) Ambient temperature Ta (C ) IC -- IF 10 3 VCC = 5V Ta = 25C RL = 100 d = 1mm 10 2 IC -- VCE 160 Ta = 25C VCC = 5V IF = 2mA RL = 100 120 IC -- Ta IC (mA) 10 2 IC (mA) 10 IF = 10mA 10 1 2mA Relative output current 10 2 5mA Collector current Collector current IC (%) 80 1 10 -1 1mA 40 10 -1 1 10 10 2 10 3 10 -2 10 -1 1 10 0 - 40 - 20 0 20 40 60 80 100 Forward current IF (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (C ) ICEO -- Ta 10 2 VCE = 10V 10 4 tr -- IC VCC = 10V Ta = 25C 100 IC -- d 80 ICEO (A) 10 10 3 RL = 1k 500 100 tr (s) Relative output current 60 Dark current Rise time 1 10 2 40 10 -1 10 20 10 -2 - 40 - 20 0 20 40 60 80 100 1 10 -2 10 -1 1 10 0 0 Ambient temperature Ta (C ) Collector current IC (mA) 2 , ,, d 2 4 6 8 10 VCC = 5V IF = 2mA IC (%) Distance d (mm) |
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