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| CHA2291 10-18GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. V5 Vd2,3,4 Vg1 Vg2 Vg3,4 Vc Typical on wafer measurements : Gain & NF 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 Main Features * * * * * * Frequency range : 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 20dB DC power consumption: 180mA @ 5V Chip size : 2.49 X 1.23 X 0.10 mm Gain (dB) NF (dB) 11 12 13 14 Frequency (GHz) 15 16 17 18 Main Characteristics Tamb. = 25C Parameter Min Typ Max Unit Fop G NF Gctrl Id Operating frequency range Small signal gain Noise figure Gain control range with Vc variation Bias current 10 23 2.2 20 180 18 GHz dB dB dB mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22912149 - 29-May-021 1/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Electrical Characteristics for Broadband Operation Tamb = +25C, V5=Vd2,3,4= 5V Symbol Fop G G Is NF Gctrl P1dB VSWRin VSWRout Vd CHA2291 Parameter Operating frequency range Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure with Vc=1.2V (1) Gain control range versus Vc Output power at 1dB compression with Vc=1.2V Input VSWR (1) Output VSWR (1) DC voltage V5= Vd2,3,4 Vc Min 10 Typ Max 18 Unit GHz dB dB dB dB dB dBm 23 1 60 2.2 20 10 3.0:1 2.5:1 5 [-0.7, +1.2] 25 180 -1.5 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bias current total (3) with Vc=1.2V (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with Vg1 voltage. (3) With Id1=25mA, adjust Vg2,3,4 voltage for a total drain current around 180mA. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Vc Vdg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage Maximum drain bias current Gate bias voltage Maximum Control bias voltage Maximum drain to gate voltage (Vd - Vg) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values +5.25 250 -2.5 to +0.4 +1.5 +5.0 +15 +175 -40 to +85 -55 to +125 Unit V mA V V V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22912149 - 29-May-02 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Typical on wafer Measurements 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 Gain (dB) CHA2291 NF (dB) 11 12 13 14 Frequency (GHz) 15 16 17 18 Bias Conditions : V5=Vd2,3,4= 5V, Vg1 for Id1= 25mA, Vg2=Vg3,4= -0.5V, Vc= 1.2V Gain & Noise Figure versus frequency In jig Measurements All these measurements include the jig losses (about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power). Bias Conditions : V5=Vd2,3,4= 5V, Vg1 for Id1= 25mA, Vg2=Vg3,4= -0.5V, Vc= 1.2V 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) S21(dB) NF (dB) S11 (dB) S22 (dB) Gain, Return Loss & Noise Figure versus frequency Ref. : DSCHA22912149 - 29-May-02 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA CHA2291 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -1,4 Gain (dB) 12GHz 16GHz 20GHz 14GHz 18GHz -1,2 -1 -0,8 -0,6 -0,4 -0,2 0 Vc (V) 0,2 0,4 0,6 0,8 1 1,2 1,4 Gain versus Vc 28 27 26 25 Gain (dB) 24 23 22 21 20 19 18 -4 -2 0 2 4 6 8 10 12 14 Output Power (dBm) 12GHz 14GHz 16GHz Gain versus Output power Ref. : DSCHA22912149 - 29-May-02 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Chip Assembly and Mechanical Data To V5 DC drain supply feed 120pF To Vd2,3,4 DC drain supply feed CHA2291 120pF RF IN RF OUT 120pF 120pF 120pF To Vg1 DC gate supply feed To Vc DC supply feed To Vg2,3,4 DC gate supply feed Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended Bond Pad:100 x 100 m Bonding pad positions ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : DSCHA22912149 - 29-May-02 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2291 Ordering Information Chip form : CHA2291-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22912149 - 29-May-021 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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