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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BYG85B Fast soft-recovery rectifier Product specification 1998 Nov 25 Philips Semiconductors Product specification Fast soft-recovery rectifier FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * UL 94V-O classified plastic package * Shipped in 12 mm embossed tape. handbook, 4 columns BYG85B The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. cathode band k a Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current average forward current Ttp = 100 C; averaged over any 20 ms period; see Figs 2 and 7 Tamb = 60 C; AL2O3 PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 Tamb = 60 C; epoxy PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 Ttp = 100 C; see Fig.3 Tamb = 60 C; AL2O3 PCB mounting; see Fig.5 Tamb = 60 C; epoxy PCB mounting; see Fig.6 CONDITIONS MIN. - - - - MAX. 100 100 2.5 1.3 V V A A UNIT IF(AV) average forward current - 0.98 A IFRM IFRM IFRM IFSM Tstg Tj repetitive peak forward current repetitive peak forward current repetitive peak forward current - - - - -65 -65 23 12 8.5 35 +175 +175 A A A A C C non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax storage temperature junction temperature 1998 Nov 25 2 Philips Semiconductors Product specification Fast soft-recovery rectifier ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 2 A; Tj = Tj max; see Fig.8 IF = 2 A; see Fig.8 IR = 0.1 mA VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.13 f = 1 MHz; VR = 0; see Fig.10 when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.12 MIN. - - 120 - - - TYP. - - - - - - BYG85B MAX. 0.78 0.98 - 5 150 12.5 V V V UNIT A A ns Cd dI R -------dt diode capacitance maximum slope of reverse recovery current - - 110 - - 2 pF A/s THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 m, see Fig.11. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.11. For more information please refer to the `General Part of associated Handbook'. CONDITIONS VALUE 25 100 150 UNIT K/W K/W K/W 1998 Nov 25 3 Philips Semiconductors Product specification Fast soft-recovery rectifier GRAPHICAL DATA MBK210 BYG85B handbook, halfpage 5 IF(AV) (A) handbook, halfpage 2.0 MBK211 IF(AV) 4 (A) 1.6 3 1.2 2 0.8 (1) (2) 1 0.4 0 0 40 80 120 160 200 Ttp (C) 0 0 40 80 120 160 200 Tamb (C) a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; = 0.5; Switched mode application; Device mounted as shown in Fig.11. 1: epoxy PCB 2: Al2O3 PCB. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, full pagewidth 30 MBK212 IFRM (A) = 0.05 20 0.1 10 0.2 0.5 1.0 0 10-2 10-1 1 10 102 103 tp (ms) 104 Ttp = 100 C; Rth j-tp = 25 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 100 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1998 Nov 25 4 Philips Semiconductors Product specification Fast soft-recovery rectifier BYG85B handbook, full pagewidth 20 MBK213 IFRM (A) 16 = 0.05 12 8 0.1 0.2 4 0.5 1.0 0 10-2 10-1 1 10 102 103 tp (ms) 104 Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 100 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 10 MBK214 IFRM (A) 8 = 0.05 6 0.1 4 0.2 0.5 1.0 2 0 10-2 10-1 1 10 102 103 tp (ms) 104 Tamb = 60 C; Rth j-a = 150 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 100 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1998 Nov 25 5 Philips Semiconductors Product specification Fast soft-recovery rectifier BYG85B handbook, halfpage 4 MBK215 handbook, halfpage I 6 MBK209 P (W) 3 a = 3 2.5 2 1.57 1.42 F (A) 5 4 2 3 2 1 1 0 0 1 2 IF(AV) (A) 3 0 0 0.4 0.8 1.2 1.6 VF (V) 2.0 a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Fig.7 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Dotted line: Tj = 175 C. Solid line: Tj = 25 C. Fig.8 Forward current as a function of forward voltage; maximum values. 103 handbook, halfpage IR (A) 102 MGC550 102 handbook, halfpage Cd (pF) MBK225 10 1 0 100 Tj (C) 200 10 1 10 VR (V) 102 VR = VRMMmax. f = 1 MHz; Tj = 25 C. Fig.9 Reverse current as a function of junction temperature; maximum values. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 1998 Nov 25 6 Philips Semiconductors Product specification Fast soft-recovery rectifier BYG85B 50 IF handbook, halfpage dI F dt t rr 10% t 50 2.5 IR dI R dt 100% MGC499 4.5 1.25 MSB213 Dimensions in mm. Fig.11 Printed-circuit board for surface mounting. Fig.12 Reverse recovery definitions. handbook, full pagewidth DUT IF (A) 0.5 t rr 0.5 A 50 0 0.25 t + IR (A) 0.5 1.0 MAM418 Rise time oscilloscope: tr 2 ns. Turn-on time switch: t 3 ns. Fig.13 Test circuit and reverse recovery time waveform and definition. 1998 Nov 25 7 Philips Semiconductors Product specification Fast soft-recovery rectifier PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors BYG85B SOD106 H D A A1 c Q E b (1) 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.3 2.0 A1 0.05 b 1.6 1.4 c 0.2 D 4.5 4.3 E 2.8 2.4 H 5.5 5.1 Q 3.3 2.7 Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD106 REFERENCES IEC JEDEC DO-214AC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-09 1998 Nov 25 8 Philips Semiconductors Product specification Fast soft-recovery rectifier DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BYG85B This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Nov 25 9 Philips Semiconductors Product specification Fast soft-recovery rectifier NOTES BYG85B 1998 Nov 25 10 Philips Semiconductors Product specification Fast soft-recovery rectifier NOTES BYG85B 1998 Nov 25 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135106/00/01/pp12 Date of release: 1998 Nov 25 Document order number: 9397 750 04762 |
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