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| BUZ45A Semiconductor Data Sheet October 1998 File Number 2258.1 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET Features * 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.800 (BUZ45 field effect transistor designed for applications such as * SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching * Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. 8.3A, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. 00V, * High Input Impedance .800 Formerly developmental type TA17425. * Majority Carrier Device hm, Nhannel Ordering Information Symbol PART NUMBER PACKAGE BRAND ower BUZ45A TO-204AA BUZ45A OSD NOTE: When ordering, use the entire part number. ET) /Author G ) /KeyS ords Harris emionducor, N- Packaging hannel JEDEC TO-204AA ower OSET, DRAIN (FLANGE) O04AA) /Creator ) /DOCIN O pdfSOURCE (PIN 2) GATE (PIN 1) ark /Pageode /UseOutines /DOCIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 |
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