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(R)
BUV20
HIGH CURRENT NPN SILICON TRANSISTOR
s
s s s s
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS
APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s SWITCHING REGULATORS
s
1 2
TO-3 (version "S")
DESCRIPTION The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CER V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 100) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case 25 o C Storage Temperature Junction Temperature Value 160 150 160 125 7 50 60 10 250 -65 to 200 200 Unit V V V V V A A A W
o o
C C
January 2000
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BUV20
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 160 V V CE = 160 V V CE = 100 V V EB = 5 V I C = 200 mA L = 25 mH 125 Tcase = 125 o C Min. Typ. Max. 3 12 3 1 Unit mA mA mA mA V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V (BR)EB0 Emitter-base Breakdown Voltage (I C = 0) V CE(sat) V BE(sat) h FE fT t on tf ts Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition frequency RESISTIVE LOAD Turn-on Time Fall Time Storage Time
I E = 50 mA
7
V
I C = 25 A I C = 50 A I C = 50 A V CE = 2 V V CE = 4 V V CE = 15 V I C = 50 A
IB = 2.5 A IB = 5 A IB = 5 A I C = 25 A I C = 50 A IC = 2 A f = 100 MHz 20 10 8
0.3 0.7 1.4
0.6 1.2 2 60
V V V
MHz 1.5 0.3 1.2 s s s
IB1 = -I B2 = 5 A
Pulsed: Pulse duration = 300 s, duty cycle 2 %.
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BUV20
TO-3 (version S) MECHANICAL DATA
mm MIN. A B C D E G N P R U V 11.00 1.47 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.60 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.058 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.063 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P G
A
D C
U
V
O
N
R
B
P003O
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E
BUV20
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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