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| TEMPFET(R) BTS 110 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 12 Pin 1 G 2 D 3 S Type BTS 110 VDS 100 V ID 10 A RDS(on) 0.2 Package TO-220AB Ordering Code C67078-A5008-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 20 10 1.75 40 37 500 40 - 55 ... + 150 E 55/150/56 K/W 3.1 75 C - W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 C Tj = - 55 ... + 150 C Short circuit dissipation, Tj = - 55 ... + 150 C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 1 19.02.04 TEMPFET(R) BTS 110 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 1 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 100 V Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C Drain-source on-state resistance VGS = 10 V, ID = 5 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 5 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 10 V, ID = 2.9 A, RGS = 50 Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 10 V, ID = 2.9 A, RGS = 50 Values typ. max. Unit V(BR)DSS 100 - 3.0 - 3.5 V VGS(th) 2.5 I DSS - - 1 100 10 300 A I GSS - - 10 2.0 0.17 100 4.0 0.2 nA A - RDS(on) gfs 2.7 3.8 450 150 80 20 45 70 55 8.0 S pF - 600 240 130 30 70 90 70 ns Ciss Coss - Crss - td(on) tr td(off) tf - - - - 2 19.02.04 TEMPFET(R) BTS 110 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 10 A, VGS = 0 V Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/s, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s, f 1 kHz Tj = - 55 ... + 160 C Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time VTS = 5 V, ITS(on) = 2 mA Values typ. max. Unit IS I SM VSD - - - - - 1.1 170 0.30 10 40 A V 1.4 ns - C - t rr - Q rr - VTS(on) - - 1.4 - - - 0.1 0.2 - - 1.5 10 V ITS(on) - - 10 600 0.5 0.3 mA Tj = 25 C Tj = 150 C IH TTS(on) 0.05 0.05 150 C - s 0.5 2.5 toff 3 19.02.04 TEMPFET(R) BTS 110 Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified. Parameter Symbol 1 Examples 2 - Unit Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 C, before short circuit VDS VGS ISC PSC tSC(off) 15 7.3 33.3 500 30 30 5.5 16.6 500 30 - - - - - V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... +150C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C 4 19.02.04 TEMPFET(R) BTS 110 Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 s Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C 5 19.02.04 TEMPFET(R) BTS 110 Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = - 5 A, VGS = 10 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA (spread) Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = 25 V 6 19.02.04 TEMPFET(R) BTS 110 Continuous drain current ID = f (TC) Parameter: VGS 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 s (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 19.02.04 TEMPFET(R) BTS 110 Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T 8 19.02.04 TEMPFET(R) BTS 110 TO 220 AB Standard Ordering Code C67078-A5008-A2 TO 220 AB SMD version E3045 Ordering Code C67078-A5008-A4 9.9 9.5 2.8 3.7 4.4 1.3 12.8 17.5 1 4.6 3) 9.2 1) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 13.5 2) 15.6 9 19.02.04 TEMPFET(R) BTS 110 Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 19.02.04 |
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