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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 1/4
BTD2097LI3
Features
* Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A * Excellent DC current gain characteristics * Complementary to BTB1326LI3
Symbol
BTD2097LI3
Outline
TO-251
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Note : 1. Single Pulse Pw350s, Duty2%.
Symbol VCBO VCEO VEBO IC ICP PD(TA=25) PD(TC=25) Tj Tstg
Limits 40 15 6 5 8 (Note 1) 1 10 150 -55~+150
Unit V V V A A W W C C
BTD2097LI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 40 15 6 180 160 Typ. 0.25 150 Max. 0.1 0.1 0.5 820 50 Unit V V V A A V MHz pF
Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 2/4
Test Conditions IC=50A, IB=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE1
Rank Range R 180~390 S 270~560 T 390~820
BTD2097LI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 1000 VCE(SAT) Current Gain---HFE
VCE=5V
Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
Saturation Voltage---(mV)
100
IC=100IB IC=60IB
VCE=2V
10
IC=30IB IC=10IB
VCE=1V
100 1 10 100 1000 10000 Collector Current---IC(mA)
1 1 10 100 1000 10000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000 Saturation Voltage---(mV) Power Dissipation---PD(W)
VBE(SAT) @ IC=10IB
Power Derating Curve
1.2 1 0.8 0.6 0.4 0.2 0
1000
100 1 10 100 1000 Collector Current---IC(mA) 10000
0
50 100 150 Ambient Temperature---TA()
200
Power Derating Curve
12 Power Dissipation---PD(W) 10 8 6 4 2 0 0 50 100 150 200 Case Temperature---TC()
BTD2097LI3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 4/4
A
B
C D
Marking:
D2097
F 3 E K 2 1 J G
I H
Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2097LI3
CYStek Product Specification

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