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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 1/4
BTD1862I3
Features
* Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A * Excellent current gain characteristics * Complementary to BTB1240I3
Symbol
BTD1862I3
Outline
TO-251
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25) Power Dissipation (TC=25) Junction Temperature Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg
Limits 40 30 5 2 5 (Note) 1 10 150 -55~+150
Unit V V V A A W W C C
BTD1862I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 40 30 5 82 Typ. 100 50 Max. 1 1 1 560 Unit V V V A A V MHz pF
Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 IC=3A, IB=0.1A VCE=3V, IC=0.5A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f =1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank Range P 82~180 Q 120~270 R 180~390 S 270~560
BTD1862I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V 10000 VCE(SAT)
Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
VCE=3V
100
IC=40IB
VCE=1V
10 IC=10IB IC=20IB
10 1 10 100 1000 Collector Current---IC(mA) 10000
1 1 10 100 1000 10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
VBE(SAT )@IC=10IB 1.2
Power Derating Curve
Power Dissipation---PD(W)
Saturation Voltage---(mV)
1 0.8 0.6 0.4 0.2 0
1000
100 1 10 100 1000 Collector Current---IC(mA) 10000
0
50 100 150 Ambient Temperature---TA()
200
Power Derating Curve
12 Power Dissipation---PD(W) 10 8 6 4 2 0 0 50 100 150 200 Case Temperature---TC()
BTD1862I3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
A B C D
Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 4/4
Marking:
D1862
F 3 E K 2 1 J G
I H
Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1862I3
CYStek Product Specification

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