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| Final data BSP 170 P SIPMOS Small-Signal-Transistor Feature * P-Channel * Enhancement mode * Avalanche rated * dv/dt rated Product Summary VDS R DS(on) ID -60 0.3 -1.9 SOT-223 4 V A 3 2 1 VPS05163 Drain pin 2 Type BSP 170 P Package SOT-223 Ordering Code Q67041-S4018 Gate pin1 Source pin 3 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol ID Value Unit Continuous drain current TA=25C TA=70C A -1.9 -1.5 Pulsed drain current TA=25C ID puls EAS EAR -7.6 70 0.18 -6 20 1.8 -55... +150 55/150/56 kV/s V W C mJ Avalanche energy, single pulse ID =-1.9 A , VDD =-25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =-1.9A, VDS =-48V, di/dt=-200A/s, Tjmax =150C dv/dt VGS Ptot Tj , Tstg Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-16 Final data BSP 170 P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJS RthJA - Values typ. max. 20 Unit K/W - 110 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) -60 -2.1 Values typ. -3 max. -4 Unit V Gate threshold voltage, VGS = VDS ID =-250A Zero gate voltage drain current VDS =-60V, VGS=0, Tj =25C VDS =-60V, VGS=0, Tj =125C A -0.1 -10 -10 0.24 -1 -100 -100 0.3 nA Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-10V, ID =-1.9 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-16 Final data BSP 170 P Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-30V, VGS=-10V, ID =-1.9A, RG=6 VDS 2*ID*RDS(on)max , ID =-1.9 VGS =0, VDS =-25V, f=1MHz Symbol Conditions min. 1.4 - Values typ. 2.8 328 105 38 14 28 92 60 max. 410 135 48 21 42 138 90 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =-48V, ID =-1.9A, VGS =0 to -10V VDD =-48V, ID =-1.9A - -1.4 -3.6 -12.5 -3.85 -2.1 -5.4 -16 - nC V(plateau) VDD =-48V, ID =-1.9A V Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, IF=-1.9A VR =-30V, IF=lS, diF /dt=-100A/s VR =-30V, IF=lS, diF /dt=100A/s IS ISM TA=25C - -0.85 36 41 -1.9 -7.6 -1.1 54 62 A V ns nC Page 3 2002-01-16 Final data BSP 170 P 1 Power dissipation Ptot = f (TA ) 1.9 BSP 170 P 2 Drain current ID = f (TA ) parameter: |VGS | 10V -2 BSP 170 P W 1.6 A -1.6 1.4 -1.4 Ptot ID 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0 C 160 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25C -10 1 BSP 170 P tp = 340.0s 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T K/W 10 2 BSP 170 P A = V /I D on ) DS 1 ms 10 1 R DS ( 10 0 10 ms -10 0 Z thJS ID 10 -1 D = 0.50 0.20 0.10 10 -3 10 -2 -10 -1 0.05 single pulse 0.02 0.01 DC 10 -4 -10 -2 -1 -10 -10 0 -10 1 V -10 2 10 -5 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 s 10 1 VDS Page 4 tp 2002-01-16 Final data BSP 170 P 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s -5 BSP 170 P 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 1 BSP 170 P Ptot = 1.8W A gf e VGS [V] a -4.0 d c a b -4 -3.5 b c d e -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0.8 RDS(on) 0.7 0.6 0.5 0.4 c d e f g ID -3 -2.5 -2 -1.5 -1 -0.5 0 0 a b f g 0.3 0.2 0.1 0 0 VGS [V] = a b c d e f -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 g -7.0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V -5 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -2.8 A -3.4 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 16 8 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: tp = 80 s 6 A S 12 - ID 4 10 8 gfs 3 2 1 1 2 3 4 5 6 8 V - V GS 0 0 6 4 2 0 0 3 6 9 A - ID 15 Page 5 2002-01-16 Final data BSP 170 P 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -1.9 , VGS = -10 V 0.8 BSP 170 P 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -250 A 4.5 V RDS(on) 0.6 - VGS(th) 3.5 98% 0.5 3 0.4 98% 0.3 typ 0.2 1.5 2% typ. 2.5 2 0.1 0 -60 -20 20 60 100 C 180 1 -60 -20 20 60 100 Tj C 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s -10 1 BSP 170 P A pF Ciss C -10 0 10 2 Coss -10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 -10 -2 0 Crss IF 5 10 15 20 V 30 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 - VDS VSD Page 6 2002-01-16 Final data BSP 170 P 13 Typ. avalanche energy EAS = f (Tj ) par.: ID = -1.9 A , VDD = -25 V, RGS = 25 80 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -1.9 A pulsed -16 BSP 170 P mJ V 60 -12 EAS 50 VGS -10 0,2 VDS max 0,8 VDS max 40 -8 30 -6 20 -4 10 -2 0 25 45 65 85 105 125 C Tj 165 0 0 2 4 6 8 10 12 14 16 nC 20 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) BSP 170 P -72 V V (BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 C 180 Tj Page 7 2002-01-16 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP 170 P Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-16 |
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