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| BPW20RF Vishay Semiconductors Silicon PN Photodiode Description BPW20RF is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. Equipped with a clear, flat glass window, the spectral responsitivity reaches from blue to near infrared. 94 8482 Features * * * * * * * * * * * * * * Hermetically sealed TO-5 case Flat glass window Cathode connected to case Wide viewing angle = 50 Large radiant sensitive area (A = 7.5 mm2) Suitable for visible and near infrared radiation High sensitivity UV enhanced Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Sensor for light measuring techniques in cameras, photometers, color analyzers, exposure meters (e.g. solariums) and other medical and industrial measuring and control applications. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t5s Tamb 50 C Test condition Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 10 300 125 - 55 to + 125 - 55 to + 125 260 250 Unit V mW C C C C K/W Document Number 81570 Rev. 1.3, 08-Mar-05 www.vishay.com 1 BPW20RF Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode capacitance Dark Resistance Test condition IF = 50 mA IR = 20 A, E = 0 VR = 5 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 10 mV Symbol VF V(BR) Iro CD CD RD 10 2 1.2 400 38 30 Min Typ. 1.0 Max 1.3 Unit V V nA nF pF G Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current Test condition EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx, VR = 5 V Ee = 1 mW/cm , = 950 nm, VR = 5 V 2 Symbol Vo TKVo Ik TKIk Ira Ira p 0.5 Min 330 20 20 Typ. 500 -2 60 0.1 60 42 50 920 550 to 1040 3.4 3.7 Max Unit mV mV/K A %/K A A deg nm nm s s Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Rise Time Fall Time VR = 0 V, RL = 1 k, = 820 nm VR = 0 V, RL = 1 k, = 820 nm tr tf Typical Characteristics (Tamb = 25 C unless otherwise specified) I ra rel - Relative Reverse Light Current 10 4 I ro - Reverse Dark Current ( nA ) 1.3 1.2 VR = 5 V = 950 nm 10 3 1.1 10 2 VR = 5 V 10 1 1.0 0.9 0.8 0 20 40 60 80 100 120 Tamb - Ambient Temperature ( C ) 10 0 20 94 8468 40 60 80 100 120 94 8469 Tamb - Ambient Temperature ( C ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 2 Document Number 81570 Rev. 1.3, 08-Mar-05 BPW20RF Vishay Semiconductors 3 10 I k - Short Circuit Current ( A ) 1400 C D - Diode Capacitance ( pF ) 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 1200 1000 800 600 400 200 0 0.1 E=0 f = 1 MHz 1 10 100 18959 E A - Illuminance ( lx ) 94 8473 V R - Reverse Voltage ( V ) Figure 3. Short Circuit Current vs. Illuminance Figure 6. Diode Capacitance vs. Reverse Voltage S ( )rel - Relative Spectral Sensitivity 100 Ira - Reverse Light Current ( A ) 1.0 0.8 0.6 0.4 0.2 0 350 10 1 VR = 5 V = 950 nm 0.1 0.01 94 8471 0.1 1 10 94 8474 550 750 950 1150 E e - Irradiance ( mW/ cm 2 ) - Wavelength ( nm ) Figure 4. Reverse Light Current vs. Irradiance Figure 7. Relative Spectral Sensitivity vs. Wavelength 100 Ira - Reverse Light Current ( A ) Srel - Relative Sensitivity 0 1 mW/cm 2 0.5 mW/cm2 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 10 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm 2 = 950 nm 1 0.1 1 10 100 94 8475 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8472 V R - Reverse Voltage ( V ) Figure 5. Reverse Light Current vs. Reverse Voltage Figure 8. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81570 Rev. 1.3, 08-Mar-05 www.vishay.com 3 BPW20RF Vishay Semiconductors Package Dimensions in mm 96 12181 www.vishay.com 4 Document Number 81570 Rev. 1.3, 08-Mar-05 BPW20RF Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81570 Rev. 1.3, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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