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| Phototransistors Side Look Chip Light Current I c(on ) (m A) @V CE =5V Ee=0.5mW /cm 2 Typ. Electrical & Optical Characteristics Saturation Vo ltage V CE(sat ) ( V ) @I C =0.1 mA Ee=0.5mW /cm 2 Max. Breakdow n Voltag e V BR(C EO ) (V) @I C =0.1 mA Ee=0 mW /cm 2 Min. Dark Current I D (n A) @V CE =10V Ee=0 mW /cm 2 Max. Viewing Angle 2 1/2 Part Nu mber Materi al Wave length p(nm ) Lens Colo r BPT-NP03C1 BPT-NP13C1 BPT-NP23C1 Si-Phototransistor (NPN) 940(400-1100) 940(400-1100) 940(400-1100) Water Clear 0.50 0.45 0.45 0.50 0.50 0.50 30 30 30 100 100 100 - BPT-NP03C2 BPT-NP13C2 BPT-NP23C2 Si-Phototransistor (NPN) 940(400-1100) 940(400-1100) 940(400-1100) Water Clear 0.65 0.45 0.65 0.50 0.50 0.50 30 30 30 100 100 100 - AMERICAN BRIGHT w w w . a m e r ica n b r ig h tle d . co m (909) 628-5050 FAX (909) 628-5006 (c) 2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice. IR-13 |
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