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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLV59 UHF linear power transistor
Product specification Supersedes data of March 1993 1998 Jan 09
Philips Semiconductors
Product specification
UHF linear power transistor
FEATURES * Internal input matching to achieve an optimum wideband capability and high power gain * Emitter-ballasting resistors for lower junction temperatures * Titanium-platinum-gold metallization ensures long life and excellent reliability. APPLICATIONS * UHF linear amplifiers in television transmitters. DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange.
1 Top view 3 5
MAM141
BLV59
PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTION emitter emitter base collector emitter emitter
handbook, halfpage
2
4
6
c b e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter class-AB circuit. MODE OF OPERATION CW, class-AB f (MHz) 860 VCE (V) 25 PL (W) 30 Gp (dB) >7 C (%) >50
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1998 Jan 09
2
Philips Semiconductors
Product specification
UHF linear power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current peak collector current total power dissipation storage temperature operating junction temperature f > 1 MHz Tmb = 25 C; f > 1 MHz open base open collector CONDITIONS open emitter - - - - - - - -65 - MIN.
BLV59
MAX. 50 27 3.5 3 3 9 70 +150 200
UNIT V V V A A A W C C
MGP379
MGP380
handbook, halfpage
10
handbook, halfpage
100
IC (A) Th = 70 C 1
Tamb = 25 C
Ptot (W)
50
(2)
(1)
10-1 1 10 VCE (V) 102
0 0 100 Th (C) 200
Rth mb-h = 0.4 K/W.
(1) Continuous operation (f > 1 MHz). (2) Short-time operation during mismatch (f > 1 MHz).
Fig.2 DC SOAR.
Fig.3
Power/temperature derating curves.
1998 Jan 09
3
Philips Semiconductors
Product specification
UHF linear power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C, Ptot = 50 W VALUE 2.3 0.4
BLV59
UNIT K/W K/W
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES E(SBR) hFE Cc Cre Ccf PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current second breakdown energy DC current gain collector capacitance feedback capacitance collector-flange capacitance CONDITIONS open emitter; IC = 50 mA open collector; IE = 10 mA VCE = 27 V; VBE = 0 VCE = 24 V; IC = 2 A VCE = 25 V; IC = 0; f = 1 MHz MIN. 50 27 3.5 - 15 - - TYP. - - - - - - 44 30 2 MAX. - - - 10 - - - - - pF pF pF UNIT V V V mA mJ
collector-emitter breakdown voltage open base; IC = 100 mA
L = 25 mH; f = 50 Hz; RBE = 10 4 VCB = 25 V; IE = ie = 0; f = 1 MHz -
handbook, halfpage
100
MGP381
MGP382
handbook, halfpage
100
VCE = 25 V hFE 20 V
Cc (pF)
50
50
0 0 4 IC (A) 8
0 0 10 20 VCB (V) 30
Tj = 25 C.
IE = ie = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Collector capacitance as a function of collector-base voltage; typical values
1998 Jan 09
4
Philips Semiconductors
Product specification
UHF linear power transistor
APPLICATION INFORMATION RF performance up to Th = 25 C in a common emitter class-AB circuit; Rth mb-h = 0.4 K/W. MODE OF OPERATION CW, class-AB Note f (MHz) 860 VCE (V) 25 IC(ZS) (mA) 60 Gp (dB) >7 typ. 8.5 PL (W) 30 C (%) >50 typ. 55
BLV59
Gp (dB)(1) <1 typ. 0.2
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, C.C.I.R. system). Ruggedness in class-AB operation The BLV59 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases at rated load power under the following conditions: VCE = 25 V; f = 860 MHz; Th = 25 C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA.
handbook, full pagewidth
C2 C1 50 C3 L1 L2
C5 L3
C7 L4 D.U.T. L6
C10 L9
C12 L10
C14 L11
C16 C18 50
C4
C6
C8 L5 C9 L7 C19 L8 R1
C11
C13
C15
C17
+VBB
+VCC C20 C21
MGP383
Temperature compensated bias (Ri < 0.1 ).
Fig.6 Class-AB test circuit at 860 MHz.
1998 Jan 09
5
Philips Semiconductors
Product specification
UHF linear power transistor
List of components (see Figs 6 and 7). COMPONENT C1, C18 C2, C14, C16 C3, C4, C15, C17 C5, C6 C7, C8 C9, C21 C10, C11 C12 C13 C19 C20 L1, L11 L2, L3 L4 L5 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 electrolytic capacitor stripline; note 3 stripline; note 3 stripline; note 3 4 turns of closely wound 0.4 mm enamelled copper wire stripline; note 3 4 turns of closely wound 1 mm enamelled Cu wire Ferroxcube HF choke stripline; note 3 stripline; note 3 metal film resistor VALUE 33 pF 3.6 pF 1.4 to 5.5 pF 1.8 pF 6.2 pF 330 pF 5.6 pF 5.6 pF 6.2 pF 10 pF 6.8 F; 63 V 50 50 42.6 60 nH 26 mm x 2.4 mm 9.5 mm x 2.4 mm 6 mm x 3 mm int. diameter 3 mm leads 2 x 5 mm 4 mm x 3 mm int. diameter 4 mm leads 2 x 5 mm DIMENSIONS
BLV59
CATALOGUE No.
2222 809 09001
L6 L7 L8 L9 L10 R1 Notes
42.6 45 nH grade 3B 50 50 10 5%; 1 W
4312 020 36642 9 mm x 2.4 mm 13.5 mm x 2.4 mm
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2.2); thickness 132".
1998 Jan 09
6
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
130
handbook, full pagewidth
copper straps
copper straps
rivets
rivets
70
rivets copper straps
rivets copper straps
L8 +VBB C9 C2 C1 L1 L5 C5 C7 L2 L3 C8 C6 C4 L7 C12 L9 C11 C13 C15 C17 L10 +VCC C19 R1 C21 C14 L11 C16 C18 C20
C10 L4 L6
C3
MGP384
Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board, the other side is unetched and serves as a ground plane. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the bases to provide a direct contact between the copper on the component side and the ground plane.
Fig.7 Printed-circuit board and component layout for 860 MHz class-AB test circuit.
1998 Jan 09
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
MGP385
MGP386
handbook, halfpage
50
PL (W) 40
handbook, halfpage
10
100 Gp
Gp (dB)
C (%)
30 5 20 C 50
10
0 0 2 4 6 8 PS (W) 10
0 0 25 PL (W) 50
0
VCE = 25 V; f = 860 MHz; IC(ZS) = 60 mA; Th = 25 C; Rth mb-h = 0.4 K/W; class-AB operation.
VCE = 25 V; f = 860 MHz; IC(ZS) = 60 mA; Th = 25 C; Rth mb-h = 0.4 K/W; class-AB operation.
Fig.8
Load power as a function of source power; typical values.
Fig.9
Power gain and efficiency as a function of load power; typical values.
handbook, halfpage
2.2
MGP387
handbook, halfpage
4
MGP388
Zi () 1.8 xi
ZL () 3 RL
1.4
2 XL ri
1
1
0.6 400
500
600
700
800 900 f (MHz)
0 400
500
600
700
800 900 f (MHz)
VCE = 25 V; PL = 30 W; Th = 25 C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation.
VCE = 25 V; PL = 30 W; Th = 25 C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation.
Fig.10 Input impedance as a function of frequency (series components); typical values.
Fig.11 Load impedance as a function of frequency (series components); typical values.
1998 Jan 09
8
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
MGP389
handbook, halfpage
15
Gp (dB) 10
5
0 400
600
800
f (MHz)
1000
VCE = 25 V; PL = 30 W; Th = 25 C; Rth mb-h = 0.4 K/W; IC(ZS) = 60 mA; class-AB operation.
Fig.12 Power gain as a function of load power; typical values.
1998 Jan 09
9
Philips Semiconductors
Product specification
UHF linear power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV59
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1998 Jan 09
10
Philips Semiconductors
Product specification
UHF linear power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV59
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jan 09
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/02/pp12
Date of release: 1998 Jan 09
Document order number:
9397 750 03119

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