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| (R) BFX34 SILICON NPN TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T case 25 C o T amb 25 C Storage Temperature o Value 120 60 6 5 5 0.87 -65 to 200 200 Unit V V V A W W o o C C Max. Operating Junction Temperature August 2001 1/4 BFX34 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max 35 200 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 60 V V EB = 4 V I C = 5 mA 120 Min. Typ. 0.02 0.05 Max. 10 10 Unit A A V V (BR)CBO Collector-base Breakdown Voltage (I E = 0) V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO I C = 100 mA 60 V Emitter-base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I E = 1 mA IC = 5 A IC = 5 A IC = 1 A I C = 1.5 A IC = 2 A I C = 0.5 A f = 20 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz I C = 0.5 A I B1 = -IB2 = 0.5 A I B = 0.5 A I B = 0.5 A V CE = 2 V V CE = 0.6 V V CE = 2 V V CE = 5 V V EB = 0.5 V V CB = 10 V 6 0.4 1.3 100 75 80 100 300 40 500 100 1 1.6 V V V V CE(sat) V BE(sat) h FE 40 70 150 MHz pF pF fT Transition Frequency Emitter-base Capacitance Collector-base Capacitance RESISTIVE LOAD Turn-on Time Turn-off Time C EBO C CBO t on t off V CC = 20 V 0.6 0.6 0.25 1.2 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 BFX34 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 BFX34 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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