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| BFS380L6 NPN Silicon RF Transistor Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz Built in 2 transistors ( TR1, TR2: die as BFR380L3) 6 TR1 5 TR2 4 4 5 6 1 2 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 P-TSLP-6-1 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS380L6 Maximum Ratings Parameter Marking Pin Configuration Package FC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150 Value 140 Unit K/W mW C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 96C Jun-11-2003 BFS380L6 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 40 mA, VCE = 3 V hFE 60 130 200 IEBO 1 A ICBO 100 nA ICES 10 A V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 Jun-11-2003 BFS380L6 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics (verified by random sampling) Transition frequency fT I C = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure I C = 8 mA, V CE = 3 V, ZS = Z Sopt, f = 1.8 GHz I C = 8 mA, V CE = 3 V, ZS = Z Sopt, f = 3 GHz Power gain, maximum available 1) I C = 40 mA, VCE = 3 V, Z S = Z Sopt , Z L = ZLopt , f = 1.8 GHz I C = 40 mA, VCE = 3 V, Z S = Z Sopt , Z L = ZLopt , f = 3 GHz Transducer gain I C = 40 mA, VCE = 3 V, Z S = Z L = 50 , f = 1.8 GHz I C = 40 mA, VCE = 3 V, Z S = Z L = 50 , f = 3 GHz Third order intercept point at output 2) VCE = 3 V, IC = 40 mA, f = 1.8 GHz, Z S = ZL = 50 1dB Compression point at output I C = 40 mA, VCE = 3 V, Z S = Z L = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz Unit max. dB GHz pF typ. 14 0.5 0.2 1.1 - Ccb Cce Ceb Fmin Gma |S21e|2 IP3 - 1.3 1.9 - 12 8 dB 10 6.5 27 dBm P-1dB - 11.5 - 3 Jun-11-2003 |
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