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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR LOW POWER USE LOW POWER USE PLANAR PASSIVATION TYPE PLANAR PASSIVATION TYPE BCR08AM OUTLINE DRAWING 5.0 MAX. Dimensions in mm VOLTAGE CLASS TYPE NAME T1 TERMINAL T2 TERMINAL GATE TERMINAL CIRCUMSCRIBE CIRCLE 0.7 1.25 1.25 1.3 12.5 MIN. 5.0 MAX. 0.8 8 0.26 1 0.1 6 0.5 0.23 * IT (RMS) ..................................................................... 0.8A * VDRM ....................................................................... 600V * IRGT I, IRGT III ............................................................ 5mA APPLICATION Electric fan, air cleaner, other general purpose control applications JEDEC : TO-92 MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=56C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings -40 ~ +125 -40 ~ +125 3.9 MAX. Unit A A A2s W W V A C C g 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VRGT I VRGT III IRGT I IRGT III VGD Rth (j-c) (dv/dt)c Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage 2 current 2 II III II III Tj=25C, VD=6V, RL=6, RG=330 Tj=125C, VD=1/2VDRM Junction to case 3 4 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=1.2A, Instantaneous measurement Tj=25C, VD=6V, RL=6, RG=330 Min. -- -- -- -- -- -- 0.1 -- 0.5 Typ. -- -- -- -- -- -- -- -- -- Max. 1.0 2.0 2.0 2.0 5 5 -- 60 -- Unit mA V V V mA mA V C/ W V/s Gate trigger Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Tj=125C 2. Measurment using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME VD TIME 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-0.4A/ms 3. Peak off-state voltage VD=400V PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 101 7 Tc = 25C 5 3 2 100 7 5 3 2 10-1 1.0 RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) 9 8 7 6 5 4 3 2 1 0 100 23 5 7 101 23 5 7 102 ON-STATE CURRENT (A) 1.5 2.0 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE 3 2 GATE VOLTAGE (V) VGT 100 7 5 3 2 10-1 7 5 3 PG(AV) = 0.1W IGM = 0.5A IRGT I IRGT III VGD = 0.1V 3 5 7 101 2 3 5 7 102 2 3 5 7103 GATE CURRENT (mA) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 2 VGM = 6V PGM = 1W GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE (C/W) 103 7 5 3 2 102 7 5 3 2 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7105 3 2 JUNCTION TO AMBIENT 102 7 5 3 2 101 7 5 3 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) TYPICAL EXAMPLE GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) JUNCTION TO CASE 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (C) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0.8 1.0 1.2 1.4 140 120 100 80 60 40 20 0 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 NATURAL CONVECTION NO FINS 120 100 80 60 40 20 0 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS ON-STATE CURRENT (A) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE LACHING CURRENT (mA) LACHING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 DISTRIBUTION + T2 , G- TYPICAL EXAMPLE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 100 (%) - T2 , G- TYPICAL EXAMPLE 10-1 -40 0 40 80 120 160 JUNCTION TEMPERATURE (C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 120 100 80 60 40 III QUADRANT 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT Mar. 2002 MITSUBISHI SEMICONDUCTOR BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) COMMUTATION CHARACTERISTICS 101 7 TYPICAL EXAMPLE 5 3 2 100 7 5 3 2 10-1 10-1 2 MINIMUM CHARACTERISTICS VALUE 3 5 7 100 CONDITIONS VD = 200V IT = 1A = 500s Tj = 125C 103 7 5 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH TYPICAL EXAMPLE IRGT I GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 3 2 102 7 5 3 2 101 0 10 23 IRGT III III QUADRANT I QUADRANT 2 3 5 7 101 5 7 101 23 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE CURRENT PULSE WIDTH (s) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 6V V A RG 6V V A RG TEST PROCEDURE II TEST PROCEDURE III Mar. 2002 |
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