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| BCP 72 PNP Silicon AF Power Transistor Preliminary data * For AF driver and output stages * High collector current * High current gain * Low collector-emitter saturation voltage Type BCP 72 Marking Ordering Code Pin Configuration PAs Q627021=E 2=C 3=E 4=B 5=C Package SOT-23-5 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99C Junction temperature Storage temperature Symbol Values 15 15 5 3 6 200 500 1.7 150 - 65 ... + 150 W C mA A Unit V VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS 55 30 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Dec-04-1996 BCP 72 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 0.15 100 20 100 V IC = 100 A, IB = 0 Collector-base breakdown voltage V(BR)CBO 15 IC = 100 A, IB = 0 Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 A, IC = 0 Collector cutoff current ICBO nA A nA 25 85 50 475 V mV 1.2 VCB = 15 V, IE = 0 , TA = 25 C VCB = 15 V, IE = 0 , TA = 150 C Emitter cutoff current IEBO hFE VEB = 4 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 2 V Collector-emitter saturation voltage 1) VCEsat VBEsat IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency fT 100 50 - MHz pF - IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% Semiconductor Group 2 Dec-04-1996 BCP 72 DC current gain hFE = f (IC) VCE = 2V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 10 3 10 4 mA - 100C 25C hFE 10 2 IC 10 3 100C 25C -50C 10 2 -50C 10 1 10 1 10 0 0 10 10 1 10 2 10 3 mA IC 10 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V 0.50 V CEsat Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Collector current IC = f (VBE) VCE = 2V 10 4 10 4 mA mA IC 10 3 -50C 25C 100C 10 2 IC 10 3 10 2 -50C 25C 100C 10 1 10 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 V BEsat 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 V BE Semiconductor Group 3 Dec-04-1996 |
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