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| BAS85T-01I SILICON SCHOTTKY BARRIER DIODE Features * * * For general applications Low turn-on voltage PN junction guard ring C A B Min A B C 3.4 1.40 0.20 Max 3.6 1.50 0.40 All dimensions in mm Mechanical Data * * Glass case Weight: 0.05g (approx) Maximum Ratings @ TA = 25C unless otherwise specified Symbol VR IF IFM @ tp = 1s @ TA = 65C IFSM Ptot Tj TA TSTG Value 30 200 300 600 250 125 -65 to +125 -65 to +150 Unit V mA mA mA mW C C C Characteristic Continuous reverse voltage Forward continuous current* Peak forward current * Surge forward current* Power dissipation* Junction temperature Operating temperature range Storage temperature range Electrical Characteristics Characteristic Reverse breakdown voltage @ Tj = 25C unless otherwise specified Symbol V(BR)R Min 30 Typ -- Max -- Unit V 10 A pulses * Valid provided that electrodes are kept at ambient temperature. DIODES INC 3050 East Hillcrest Drive, Westlake Village, CA 91362-3154 TEL: (805) 446-4800 FAX: (805) 446-4850 Document Number: 11004 Revision A- 5 Page 1 of 1 FAX-BACK: (805) 446-4870 www.diodes.com |
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