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 @vic
AV2907
Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N2907
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -40 -60 -5.0 -600 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C TO-92
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = -3.0 Vdc) Collector Cutoff Current (VCE = -10 V) Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO -- -- IEBO ICEO IBEX -- -- -- -0.01 -10 -10 -10 -50 nAdc nAdc nAdc -40 -60 -5.0 -- -- -- -- -50 Vdc Vdc Vdc nAdc Adc
v 300 ms, Duty Cycle v 2.0%.
Cp 1 Website: http://www.avictek.com
Copyright @vic Electronics Corp.
1
@vic
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max
AV2907
Unit
ON CHARACTERISTICS
DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc)(1) (IC = -500 mAdc, VCE = -10 Vdc)(1) Collector - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) hFE 75 100 100 100 50 VCE(sat) -- -- VBE(sat) -- -- -1.3 -2.0 -0.4 -1.0 Vdc -- -- -- 300 -- Vdc --
SMALL- SIGNAL CHARACTERISTICS
Current - Gain -- Bandwidth Product(1), (2) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 -- -- -- 8.0 30 MHz pF pF
SWITCHING CHARACTERISTICS
Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) (Figure 2) (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (Figures 1 and 5) ton td tr toff ts tf -- -- -- -- -- -- 50 10 40 110 80 30 ns ns ns ns ns ns
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -30 V 200 ns
v
v
-30 V 200
+15 V
-6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns
1.0 k 1.0 k 50
TO OSCILLOSCOPE RISE TIME 5.0 ns
1N916
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
Copyright @vic Electronics Corp.
2
Website: http://www.avictek.com
@vic
TYPICAL CHARACTERISTICS
3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = -1.0 V VCE = -10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 -0.1 - 55C
AV2907
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50 -70 -100
-200 -300
-500
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
-0.8 IC = -1.0 mA -0.6 -10 mA -100 mA -500 mA
-0.4
-0.2
0 -0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2
-0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA)
-2.0
-3.0
-5.0 -7.0 -10
-20 -30
-50
Figure 4. Collector Saturation Region
300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT tr
500 VCC = -30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 ts = ts - 1/8 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
-20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
Figure 6. Turn-Off Time
Copyright @vic Electronics Corp.
3
Website: http://www.avictek.com
@vic
TYPICAL SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C
10 10 f = 1.0 kHz NF, NOISE FIGURE (dB) 8.0 IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0
AV2907
6.0
6.0
4.0
4.0
IC = -50 A -100 A -500 A -1.0 mA
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
0
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
30 20 C, CAPACITANCE (pF) Ceb
400 300 200
10 7.0 5.0 3.0 2.0 -0.1 Ccb
100 80 60 40 30 20 -1.0 -2.0
VCE = -20 V TJ = 25C
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current-Gain -- Bandwidth Product
-1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = -10 V
+0.5 0 RqVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE
-0.6
-0.4
-0.2
0 -0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200
-500
-5.0 -10 -20
-50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. "On" Voltage
Figure 12. Temperature Coefficients
Copyright @vic Electronics Corp.
4
Website: http://www.avictek.com


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