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| D G S TO-247 ARF449A ARF449B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 90W 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. * Specified 150 Volt, 81.36 MHz Characteristics: * Output Power = 90 Watts. * Gain = 13dB (Class C) * Efficiency = 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case * Low Cost Common Source RF Package. * Very High Breakdown for Improved Ruggedness. * Low Thermal Resistance. * Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25C unless otherwise specified. ARF449A/449B UNIT Volts 450 450 9 30 165 0.76 -55 to 150 C Amps Volts Watts C/W Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 450 4 25 A (ID(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 100 3 2 5.8 5 nA mhos Volts 7-2003 050-4909 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6y MIN TYP ARF449A/449B MAX UNIT 980 87 25 5 3.1 15 3 1200 120 40 10 7 25 7 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 20:1 Test Conditions f = 81.36 MHz VGS = 0V VDD = 150V MIN TYP MAX UNIT dB % 12 70 13 75 Pout = 90W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 3000 Class C VDD = 150V Pout = 150W CAPACITANCE (pf) 1000 500 Ciss Coss 100 Crss 50 15 10 5 0 30 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 10 16 ID, DRAIN CURRENT (AMPERES) TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 50 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10S 100S 12 10 5 1mS 8 10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 100mS DC 7-2003 4 TJ = +125C TJ = -55C 050-4909 Rev C TJ = +25C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ARF449A/449B 1.2 1.1 1.0 0.9 0.8 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 25 20 VGS=8, 10 & 15V 15 6.5V 6V 10 5.5V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 160 Class C VDD = 150V 5 5V 4.5V 0 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics f = 81.36 MHz 120 GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 14 POUT, POWER OUT (WATTS) 12 Class C VDD = 150V f = 81.36 MHz 80 10 40 8 0 0 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 2 40 80 120 160 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 6 0 0.8 D=0.5 , THERMAL IMPEDANCE (C/W) 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC Z JC 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 10 Table 1 - Typical Class C Large Signal Input-Output Impedance Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 80.0 100.0 Z in () 23.00 - j 7.0 4.30 - j 9.1 1.00 - j 4.2 0.42 - j 1.7 0.35 + j 1.1 0.56 + j 2.5 0.90 + j 3.8 Z OL () 93.0 - j 10 63.0 - j 43 32.0 - j 43 17.5 - j 34 7.7 - j 22 5.1 - j 16 3.4 - j 12 Z in - gate shunted by 25 Z OL - conjugate of optimum load impedance for 150W at 150V 050-4909 Rev C 7-2003 ARF449A/449B 81.36 MHz Test Circuit Parts List C1 -- 680pF Unelco C2-C4 -- Arco 463 Mica Trimmer C5-C7 -- 1nF 500V COG chip L1 -- 0.8" #18 AWG into hairpin ~19nH L2-L3 -- 3t #18 AWG .25" ID ~50nH L4 -- 10t #18 AWG .25" ID ~470nH L5 -- VK200-4B ferrite choke ~3uH R1 -- 25 Ohm 1/2W Carbon T1 -- 4:1 Broadband Transformer L5 + C6 L4 L2 C5 C7 - 150V L3 RF Output RF Input T1 L1 DUT C3 C4 C2 C1 R1 81.36 MHz Test Circuit TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Device ARF449A ARF449B Gate Drain Source Source Drain Gate 7-2003 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 050-4909 Rev C APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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