View APTGT35H120T3G_1212415.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGT35H120T3G
Full - Bridge Fast Trench + Field Stop IGBT(R) Power Module
13 14
VCES = 1200V IC = 35A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant Max ratings 1200 55 35 70 20 208 70A@1150V Unit V A V W
July, 2006 1-5 APTGT35H120T3G - Rev 1
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGT35H120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 35A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 35A R G = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 35A R G = 27 VGE = 15V VBus = 600V Tj = 125C IC = 35A R G = 27 Typ Max 250 500 2.1 6.5 400 Max Unit A V V nA Unit nF
5.0
1.7 2.0 5.8
Dynamic Characteristics
Min
Typ 2.5 0.15 90 30 420 70 90 50 520 90 3.5
ns
ns
mJ 4.1
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 30A IF = 60A IF = 30A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 30A VR = 800V
di/dt =1000A/s
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
30 2.0 2.3 1.8 370 500 660 3450 1.6
2.5 V
trr Qrr Er
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
nC mJ
www.microsemi.com
2-5
APTGT35H120T3G - Rev 1
Tj = 125C
July, 2006
IF = 30A VR = 800V di/dt =200A/s
ns
APTGT35H120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.6 1.2 150 125 100 4.7 110
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
2500 -40 -40 -40 2.5
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT35H120T3G - Rev 1
July, 2006
17
28
APTGT35H120T3G
Typical Performance Curve
80 70 60
IC (A) Output Characteristics (V GE=15V) Output Characteristics 70 60 50 IC (A)
T J=125C T J = 125C VGE =17V VGE=13V VGE =15V
T J=25C
50 40 30 20 10 0 0 0.5 1 1.5 2 VCE (V)
40 30 20 10 0
VGE=9V
2.5
3
3.5
0
1
2 V CE (V)
3
4
Transfert Characteristics 70 60 50 IC (A) 40 30 20 10 0 5 6 7 8 9 10 11 12 V GE (V) Switching Energy Losses vs Gate Resistance 8 7 6 E (mJ) 5 4 3 2 25 45 65 85 Gate Resistance (ohms) 105
VCE = 600V VGE =15V IC = 35A T J = 125C T J=25C T J=125C
Energy losses vs Collector Current 8 7 6 E (mJ) 5 4 3 2 1 0 0 10 20 30 40 IC (A) Reverse Bias Safe Operating Area 80 70 60 IC (A) 50 40 30 20 10 0 0 400 800 V CE (V) 1200 1600
VGE=15V T J=125C RG=27 V CE = 600V V GE = 15V RG = 27 T J = 125C Eoff
Eon
50
60
70
80
Eon
Eoff
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.9
0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Single Pulse
0 0.00001
www.microsemi.com
4-5
APTGT35H120T3G - Rev 1
July, 2006
0.7
APTGT35H120T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80
V CE=600V D=50% RG =27 T J=125C T C=75C
Forward Characteristic of diode 80 70 60 50 IF (A) 40 30
60
ZVS ZCS
40
20
hard switching
20 10 0 20 30 IC (A) 40 50 60 0
T J=125C
TJ =25C
0 0
10
0.5
1
1.5 VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2
Diode
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGT35H120T3G - Rev 1
July, 2006

▲Up To Search▲

Price & Availability of APTGT35H120T3G

	To Download APTGT35H120T3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .