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APTGT150A60T
Phase leg Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1 NT C2
VCES = 600V IC = 150A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
E1 OUT Q2 G2
E2
0/VBUS
NT C1
G2 E2
OUT
VBUS
0/VBUS
OUT
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C
Reverse Bias Safe Operating Area
300A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT150A60T - Rev 0
May, 2005
Max ratings 600 225 150 350 20 480
Unit V A V W
APTGT150A60T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 150A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 150A R G = 6.8 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 150A R G = 6.8
Min
Typ 9200 580 270 115 45 225 55 130 50 300 70 2.6 5.3
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=600V
50% duty cycle
Min 600 Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Typ
Max 250 500
Unit V A A
IF = 150A VGE = 0V IF = 150A VR = 300V
di/dt =2100A/s
150 1.6 1.5 130 225 6.9 14.5
2
V ns C
APT website - http://www.advancedpower.com
2-5
APTGT150A60T - Rev 0
May, 2005
APTGT150A60T
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.31 0.52 175 125 100 4.7 160
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
2500 -40 -40 -40 1.5
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT150A60T - Rev 0
May, 2005
APTGT150A60T
Typical Performance Curve
300 250
T J=125C
Output Characteristics (VGE =15V)
TJ=25C
Output Characteristics 300
TJ = 150C VGE =19V
250
TJ=150C
IC (A)
200 150 100 50 0 0 0.5 1
T J=25C
200 IC (A) 150 100
V GE=13V VGE =15V
VGE =9V
50 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
300 250 200 150 100 50 0 5
Transfert Characteristics 10
T J=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 6.8 TJ = 150C Eoff Eon
8 E (mJ) 6 4
IC (A)
T J=125C TJ =150C T J=25C
Er
2
Eon
0 11 12 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350
Eon
6
7
8
9
10
200
250
300
VGE (V) Switching Energy Losses vs Gate Resistance 20 16 E (mJ) 12 8 4 0 5 10 15 20 25 30 35 Gate Resistance (ohms) 40
Eoff Eon Er Eoff VCE = 300V VGE =15V IC = 150A T J = 150C
300 250 IC (A) 200 150 100 50 0 0 100 200 300 400 V CE (V) 500 600 700
VGE=15V T J=150C RG=6.8
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7
IGBT
0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
APT website - http://www.advancedpower.com
4-5
APTGT150A60T - Rev 0
May, 2005
0.5
APTGT150A60T
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80
ZVS ZCS VCE=300V D=50% RG=6.8 TJ =150C
Forward Characteristic of diode 300 250 200 IC (A) 150 100 50
TJ =25C TJ =125C T J=150C
Tc=85C
60 40 20 0 0 50 100 IC (A) 150 200
Hard switching
0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT150A60T - Rev 0
May, 2005

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