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APTGF30H60T3 Full - Bridge NPT IGBT Power Module 13 14 VCES = 600V IC = 30A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability Q1 18 19 CR1 CR3 Q3 11 10 22 23 Q2 7 8 CR4 Q4 26 27 CR2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C A V W 60A@500V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-6 APTGF30H60T3 - Rev 0 September, 2004 Parameter Collector - Emitter Breakdown Voltage Max ratings 600 42 30 150 20 140 Unit V APTGF30H60T3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min 600 1 1 2.0 2.2 500 2.45 6 400 Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.3 0.8 Max Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0V, IC = 500A Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 30A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 30A R G = 6.8 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 30A R G = 6.8 Typ Max Unit V A mA V V nA Unit pF 1.7 4 Dynamic Characteristics Min nC ns ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Min 600 Typ Max 150 500 Unit V A A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage VR=600V 50% duty cycle 15 1.8 1.6 IF = 15A IF = 30A IF = 15A IF = 30A VR = 400V di/dt =200A/s V 1.6 Tj = 150C Tj = 25C Tj = 100C Tj = 25C Tj = 100C 40 80 50 120 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APT website - http://www.advancedpower.com 2-6 APTGF30H60T3 - Rev 0 September, 2004 APTGF30H60T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.9 2.0 150 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 To heatsink M4 Package outline 1 12 APT website - http://www.advancedpower.com 3-6 APTGF30H60T3 - Rev 0 September, 2004 17 28 APTGF30H60T3 Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 Ic, Collector Current (A) 250s Pulse Test < 0.5% Duty cycle T J=-55C 250s Pulse Test < 0.5% Duty cycle TJ=-55C 120 Ic, Collector Current (A) 90 TJ=25C 75 TJ=25C 60 TJ=125C 50 30 25 TJ=125C 0 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 100 VGE, Gate to Emitter Voltage (V) 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge 18 250s Pulse Test < 0.5% Duty cycle 4 Ic, Collector Current (A) 16 14 12 10 8 6 4 2 0 0 IC = 30A TJ = 25C VCE=120V VCE=300V VCE=480V 75 50 25 TJ=125C TJ=25C TJ=-55C 0 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 10 20 40 60 80 100 120 Gate Charge (nC) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 Ic=15A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=30A Ic=60A VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8 Ic=15A Ic=30A T J = 25C 250s Pulse Test < 0.5% Duty cycle Ic=60A 10 12 14 VGE, Gate to Emitter Voltage (V) 16 Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature 60 50 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (C) APT website - http://www.advancedpower.com 4-6 APTGF30H60T3 - Rev 0 September, 2004 40 APTGF30H60T3 Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 50 125 Turn-Off Delay Time vs Collector Current 40 VGE = 15V 100 VGE =15V, T J=25C VGE=15V, TJ=125C 30 Tj = 125C VCE = 400V RG = 6.8 75 20 50 V CE = 400V RG = 6.8 10 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 40 30 20 10 0 0 10 20 30 40 50 60 ICE , Collector to Emitter Current (A) 70 VGE =15V, T J=125C VCE = 400V RG = 6.8 25 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 40 tf, Fall Time (ns) tr, Rise Time (ns) 30 T J = 125C 20 T J = 25C 10 VCE = 400V, V GE = 15V, RG = 6.8 0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70 E off, Turn-off Energy Loss (mJ) Turn-On Energy Loss vs Collector Current 1 E on, Turn-On Energy Loss (mJ) VCE = 400V RG = 6.8 T J=125C, VGE=15V 2 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 6.8 TJ = 125C 0.75 0.5 0.25 0 0 1.5 1 0.5 0 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Minimum Switching Safe Operating Area 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 1 Switching Energy Losses (mJ) IC, Collector Current (A) Eoff, 30A 70 60 50 40 30 20 10 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 100 200 300 400 500 600 VCE, Collector to Emitter Voltage (V) 0.75 Eon, 30A 0.5 0.25 0 APT website - http://www.advancedpower.com 5-6 APTGF30H60T3 - Rev 0 V CE = 400V V GE = 15V T J= 125C September, 2004 APTGF30H60T3 Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF) Cies Operating Frequency vs Collector Current 280 240 200 160 120 80 40 0 0 10 20 30 hard switching ZVS 1000 Coes V CE = 400V D = 50% RG = 6.8 T J = 125C T C= 75C ZCS 100 Cres 10 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V) 40 50 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.3 Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) 0.1 1 0.5 0.9 0.7 0.1 0.05 0 0.00001 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 6-6 APTGF30H60T3 - Rev 0 APT reserves the right to change, without notice, the specifications and information contained herein September, 2004 |
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