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APT60M60JLL
800V 70A 0.060
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
D
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
G S
All Ratings: TC = 25C unless otherwise specified.
APT60M60JLL UNIT Volts Amps
600 70 280 30 40 694 5.56 -55 to 150 300 70 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.060 100 500 100 3 5
(VGS = 10V, 35A)
Ohms A nA Volts
11-2003 050-7091 Rev A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT60M60JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 70A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 70A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 70A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 70A, RG = 5
MIN
TYP
MAX
UNIT
12630 2202 157 289 74 146 21 16 51 12 1428 1386 2058 1691 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
70 280 1.3 950 33.0 8
(Body Diode) (VGS = 0V, IS = -70A)
Reverse Recovery Time (IS = -70A, dl S /dt = 100A/s) Reverse Recovery Charge (IS = -70A, dl S /dt = 100A/s) Peak Diode Recovery
dv/ dt 5
Q
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.47mH, RG = 25, Peak IL = 70A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -70A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
, THERMAL IMPEDANCE (C/W)
0.16
0.9
0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
11-2003
050-7091 Rev A
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
200
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
APT60M60JLL
180 160 140 5.5V 120 100 80 60 40 4.5V 20 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO V = 10V @ 35A
GS
VGS =15 & 10V
6.5V 6V
0.0244
0.0731F
Power (watts)
0.133
0.701F
5V
0.0218 Case temperature. (C)
20.1F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 250
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
200
1.30 1.20 VGS=10V 1.10
150 TJ = -55C
100
1.00
VGS=20V
50
TJ = +25C TJ = +125C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0.90 0.80
0
0
40 80 120 160 200 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
70 60 50 40 30 20 10 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 35A = 10V
GS
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1
1.0
1.5
0.9
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7091 Rev A
11-2003
0.8
APT60M60JLL
280
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
40,000 100S 10,000
C, CAPACITANCE (pF)
100 50
Ciss
1mS 10 5 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
I
D
Coss 1,000
10mS
1
= 70A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 300
100
Crss
100 TJ =+150C TJ =+25C
12 VDS= 120V VDS= 300V VDS= 480V
8
10
4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 250 td(off) 200
td(on) and td(off) (ns)
0 0
50
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140
V
DD G
1
= 400V
120 100
R
= 5
T = 125C
J
L = 100H V
DD G
= 400V
tf
150
R
= 5
tr and tf (ns)
T = 125C
J
80 60 40
L = 100H
100
50
td(on)
20 0
tr
0 0 60 80 100 120 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
20
40
60 80 100 120 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000
V I
DD
0
20
40
4000 3500
SWITCHING ENERGY (J)
V
= 400V
= 400V
R
= 5
D J
= 70A
T = 125C
J
SWITCHING ENERGY (J)
3000 2500 2000 1500 1000 500 0
L = 100H E ON includes diode reverse recovery.
8000
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
6000
Eon
4000 Eon
11-2003
Eoff
2000
050-7091 Rev A
0 0 20 40 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
60 80 100 120 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
Gate Voltage
APT60M60JLL
10 %
T = 125 C J
90%
Gate Voltage Drain Voltage
T = 125 C J
td(on)
Drain Current
td(off)
90%
90% tr
5% 5%
Switching Energy
tf
Drain Voltage Switching Energy
10 %
10%
Drain Current
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7091 Rev A
11-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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