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500V 35A 0.140
APT5014BLL APT5014SLL
D3PAK
TO-247
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT5014BLL-SLL UNIT Volts Amps
500 35 140 30 40 403 3.22 -55 to 150 300 35 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.140 100 500 100 3 5
(VGS = 10V, 17.5A)
Ohms A nA Volts
6-2004 050-7006 Rev B
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5014 BLL - SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 35A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 35A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 35A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 333V, VGS = 15V ID = 35A, RG = 5
MIN
TYP
MAX
UNIT
3261 704 50 72 20 36 11 6 23 3 325 249 545 288
MIN TYP MAX UNIT Amps Volts ns C nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
35 140 1.3 510 10 8
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -35A)
Reverse Recovery Time (IS = -35A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -35A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.31 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 2.12mH, RG = 25, Peak IL = 35A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -35A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
, THERMAL IMPEDANCE (C/W)
0.30 0.25
0.9
0.7 0.20 0.15 0.10 0.05 0 0.5 Note:
PDM t1 t2
6-2004
0.3
050-7006 Rev B
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
100 15 &10V
ID, DRAIN CURRENT (AMPERES)
APT5014 BLL_SLL
8V
80
RC MODEL Junction temp. (C) 0.119 Power (watts) 0.191 Case temperature. (C) 0.319F 0.0135F
60
7V 6.5V
20
20
6V 5.5V 5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2
V NORMALIZED TO = 10V @ 17.5A
0
100
GS
ID, DRAIN CURRENT (AMPERES)
80
1.15 1.10 1.05 VGS=20V 1.0 0.95 0.90
60
VGS=10V
40
TJ = +125C TJ = +25C TJ = -55C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
20
0
0
35 30 25 20 15 10 5 0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
I
D
= 17.5A = 10V
V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
1.1 1.0 0.9 0.8 0.7 0.6 -50
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7006 Rev B
6-2004
Typical Performance Curves
140
OPERATION HERE LIMITED BY RDS (ON)
10,000
APT5014 BLL_SLL
Ciss
ID, DRAIN CURRENT (AMPERES)
50
C, CAPACITANCE (pF)
100S
1,000
Coss
10 1mS TC =+25C TJ =+150C SINGLE PULSE
100 Crss
10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
10
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 35A
200 100 50 TJ =+150C TJ =+25C
14 12 10 8 6 4 2 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 60 50 td(off) 0 0 VDS=100V VDS=250V
VDS=400V
10 5
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 60 50
V
DD G
= 333V
R
= 5
T = 125C
J
L = 100H
tf
td(on) and td(off) (ns)
40 30 20 10 0
V
DD G
= 333V
R
= 5
tr and tf (ns)
T = 125C
J
40 30 20
L = 100H
td(on)
tr 10 0
0
30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20
30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 1200
SWITCHING ENERGY (J)
V I
DD
0
10
20
1000
= 333V
= 333V
R
= 5
D J
= 35A
SWITCHING ENERGY (J)
800
T = 125C
J
T = 125C L = 100H E ON includes diode reverse recovery.
Eoff
L = 100H EON includes diode reverse recovery.
1000 800 600 400 200 0
600 Eon 400
Eon
6-2004
200
050-7006 Rev B
Eoff
30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
10
20
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
Gate Voltage
APT5014 BLL_SLL
10 % td(on) tr 90%
Drain Current T = 125 C J
90%
Gate Voltage
t
T = 125 C J
d(off) Drain Voltage
90%
tf
5%
Switching Energy
10 %
Drain Voltage Switching Energy
10% 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7006 Rev B
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
6-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

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