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APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET C OLMOS O Power Semiconductors T-MAXTM TO-264 * Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Popular T-MAXTM or TO-264 Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25C unless otherwise specified. APT34N80B2C3_LC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 800 34 102 20 30 417 3.33 -55 to 150 300 50 17 0.5 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/C C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.125 1.0 0.145 50 500 200 2.10 3 3.9 (VGS = 10V, ID = 22A) Ohms A nA Volts Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 050-7147 Rev F 6-2006 DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT34N80B2C3 _LC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 34A @ 25C RESISTIVE SWITCHING VGS = 10V VDD = 400V ID = 34A @ 125C RG = 2.5 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 34A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 533V, VGS = 15V ID = 34A, RG = 5 MIN TYP MAX UNIT 4510 2050 110 180 22 90 25 15 70 6 675 580 1145 670 MIN TYP MAX UNIT Amps Volts ns C pF 355 nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 80 9 ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 34 102 1 855 30 6 MIN TYP MAX (Body Diode) (VGS = 0V, IS = -34A) 1.2 Reverse Recovery Time (IS = -34A, dl S /dt = 100A/s, VR = 400V) Reverse Recovery Charge (IS = -34A, dl S /dt = 100A/s, VR = 400V) Peak Diode Recovery dv/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W .30 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 , THERMAL IMPEDANCE (C/W) 4 Starting Tj = +25C, L = 115.92mH, RG = 25, Peak IL = 3.4A 5 IS = -34A di/dt = 100A/s VR = 480V TJ = 125C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.30 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 Note: PDM 6-2006 0.3 t1 t2 050-7147 Rev F Z JC 0.1 0.05 10-5 10-4 SINGLE PULSE Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 50 APT34N80B2C3 _LC3 VGS =15 & 10V 6.5V 6V 5.5V 40 TJ ( C) 0.117 Dissipated Power (Watts) 0.00828 0.174 TC ( C) 0.183 30 5V ZEXT 20 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 10 4.5V 4V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.30 1.20 VGS=10V 1.10 1.00 0.90 0.80 NORMALIZED TO V = 10V @ 17A GS 0 100 90 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 70 60 50 40 30 20 10 0 TJ = -55C TJ = +25C TJ = +125C 012 34 567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS VGS=20V 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 60 35 30 25 20 15 10 5 0 25 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 ID, DRAIN CURRENT (AMPERES) 50 75 100 125 150 -50 0 50 100 150 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3.0 I V D TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 = 17A = 10V 2.0 1.5 1.0 0.5 0 -50 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 2.5 GS -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7147 Rev F 6-2006 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 20,000 10,000 APT34N80B2C3 _LC3 Ciss C, CAPACITANCE (pF) Graph removed 1000 Coss 100 Crss VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I D 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 10 = 34A 200 100 TJ =+150C TJ =+25C 10 16 VDS= 160V 12 VDS= 400V 8 VDS= 640V 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 180 160 140 td(on) and td(off) (ns) 4 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 90 80 70 V DD G 1 = 533V td(off) R = 5 T = 125C J tf L = 100H 120 100 80 60 40 20 0 0 V DD G = 533V 60 tr and tf (ns) R = 5 T = 125C J 50 40 30 20 tr L = 100H td(on) 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 10 0 0 10 20 10 20 30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000 V I DD 2000 = 533V R = 5 = 533V 3500 SWITCHING ENERGY (J) D J = 34A T = 125C SWITCHING ENERGY (J) 1500 J T = 125C L = 100H EON includes diode reverse recovery. Eoff L = 100H EON includes diode reverse recovery. 3000 2500 2000 1500 1000 500 1000 Eoff Eon Eon 6-2006 500 050-7147 Rev F 30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 10 20 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5 APT34N80B2C3 _LC3 Gate Voltage 10 % T = 125 C J td(on) Drain Current 90% t d(off) Gate Voltage T = 125 C J 90% Drain Voltage 90% 5% tr 10 % t f 10% 0 Drain Current 5% Drain Voltage Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DF100 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7147 Rev F 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 6-2006 19.81 (.780) 20.32 (.800) Gate Drain Source Gate Drain Source |
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