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APT28F60B APT28F60S
600V, 28A, 0.25 Max, trr 230ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
TO
-2
47
D3PAK
APT28F60B
APT28F60S
D
Single die FREDFET
G S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 28 18 105 30 780 14
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 520 0.24 Unit W C/W
C
3-2007 050-8118 Rev A
oz g in*lbf N*m
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 14A VGS = VDS, ID = 1mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C
APT28F60B_S
Typ 0.57 0.20 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 600
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.25 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 14A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 27 5575 55 510 270
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 400V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 14A, VDS = 300V Resistive Switching VDD = 400V, ID = 14A RG = 4.7 6 , VGG = 15V
140 140 30 60 31 36 95 29 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 28
Unit A
G S
TJ = 25C TJ = 125C
105 1.0 230 430 0.83 2.07 8.0 11.2 20 V ns C A V/ns
ISD = 14A, TJ = 25C, VGS = 0V
ISD = 14A 3 diSD/dt = 100A/s VDD = 100V
TJ = 25C TJ = 125C TJ = 25C TJ = 125C
ISD 14A, di/dt 1000A/s, VDD = 400V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 7.96mH, RG = 4.7, IAS = 14A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.33E-7/VDS^2 + 3.06E-8/VDS + 8.83E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 3-2007 050-8118 Rev A
120 100 ID, DRAIN CURRENT (A) 80 60 40 20
V
GS
= 10V
45 40 ID, DRIAN CURRENT (A)
TJ = -55C
APT28F60B_S
T = 125C
J
V
35 30 25 20 15 10 5 0 0
GS
= 7 &,10V
TJ = 25C
6.5V
6V
TJ = 150C
TJ = 125C
0
5.5V 5V
30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 14A
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
100
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
80 ID, DRAIN CURRENT (A)
60
TJ = -55C TJ = 25C TJ = 125C
40
20
0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 50
0
0
8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
Ciss
10,000
gfs, TRANSCONDUCTANCE
40
TJ = 25C
C, CAPACITANCE (pF)
TJ = -55C
1000
30
TJ = 125C
20
100
Coss
10 Crss 0 0 5 30 25 20 15 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 35 600 500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 100 ISD, REVERSE DRAIN CURRENT (A) 90 80 70 60 50 40 30 20 10 0 0
TJ = 25C
10
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
ID = 14A
VDS = 120V
VDS = 300V
TJ = 150C
050-8118
20 40 60 80 100 120 140 160 180 200 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0
0
1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev A
3-2007
VDS = 480V
200 100
I
200 100 ID, DRAIN CURRENT (A)
DM
APT28F60B_S
ID, DRAIN CURRENT (A)
IDM
Rds(on)
10
13s
Rds(on)
10
13s 100s 1ms
100s
1ms 10ms 100ms
1
1
0.1
TJ = 125C TC = 75C
DC line
1
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
TJ = 150C TC = 25C
10ms
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
TJ (C)
0.011 Dissipated Power (Watts) 0.00635 0.0102 0.251 0.0906
TC (C)
0.138 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 11, Transient Thermal Impedance Model 0.25
D = 0.9
Z JC, THERMAL IMPEDANCE (C/W)
0.20
0.7
0.15
0.5
Note:
PDM
0.10
0.3
ZEXT
t1 t2
0.05
0.1 0.05
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
0
10
-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10-4
1.0
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D3PAK Package Outline
Drain (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
3-2007
19.81 (.780) 20.32 (.800)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Rev A
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
050-8118
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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