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APT10026L2FLL 1000V 38A 0.260 POWER MOS 7 (R) R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 * Increased Power Dissipation * Easier To Drive * Popular TO-264 MAX Package D G S All Ratings: TC = 25C unless otherwise specified. APT10026L2FLL UNIT Volts Amps 1000 38 152 30 40 893 7.14 -55 to 150 300 38 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1000 0.260 100 500 100 3 5 (VGS = 10V, 19A) Ohms A nA Volts 12-2003 050-7112 Rev A Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT10026L2FLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 38A, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 667V VGS = 15V ID = 38A, RG = 3 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 7114 1268 224 267 34 173 17 8 39 9 1196 713 2014 971 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 38 152 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -38A) 5 dv/ t rr Reverse Recovery Time (IS = -38A, di/dt = 100A/s) Reverse Recovery Charge (IS = -38A, di/dt = 100A/s) Peak Recovery Current (IS = -38A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient 310 625 2.0 6.0 15 2.6 TYP MAX Q rr IRRM C Amps THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W 0.14 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.16 , THERMAL IMPEDANCE (C/W) 4 Starting Tj = +25C, L = 4.43mH, RG = 25, Peak IL = 38A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -30A di/dt 700A/s VR 1000 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.14 0.9 0.12 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.7 0.5 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 12-2003 050-7112 Rev A Z JC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 90 80 ID, DRAIN CURRENT (AMPERES) APT10026L2FLL 15 &10V 7.5V 7V 70 60 50 40 6V 30 20 5.5V 10 0 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 V GS RC MODEL Junction temp. (C) 0.0509 Power (watts) 0.0894 Case temperature. (C) 0.988F 0.0522F 6.5V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 VDS> ID (ON) x RDS(ON) MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO = 10V @ I = 19A D ID, DRAIN CURRENT (AMPERES) 100 80 1.3 1.2 VGS=10V 1.1 TJ = -55C 60 40 TJ = +25C 1.0 VGS=20V 0.9 0.8 20 TJ = +125C 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 40 35 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) I V D ID, DRAIN CURRENT (AMPERES) 1.10 30 25 20 15 10 5 0 25 1.05 1.00 0.95 0.90 0.85 -50 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 = 19A = 10V GS -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 1.5 1.0 0.5 0.7 0.6 -50 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -25 050-7112 Rev A 12-2003 APT10026L2FLL 152 OPERATION HERE LIMITED BY RDS (ON) 30,000 ID, DRAIN CURRENT (AMPERES) 50 100S C, CAPACITANCE (pF) 10,000 Ciss 10 1mS 1,000 Coss 1 TC = +25C TJ = +150C SINGLE PULSE 10mS Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I D 100 = 38A 100 12 VDS = 200V TJ =+150C TJ =+25C 8 VDS = 500V VDS = 800V 10 4 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 160 140 120 td(on) and td(off) (ns) V 0 0 50 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 100 V DD G td(off) 80 DD G = 667V R = 3 T = 125C J L = 100H = 667V tf tr and tf (ns) 100 80 60 40 20 0 R = 3 60 T = 125C J L = 100H 40 20 td(on) 0 5 10 15 20 25 30 35 40 45 50 55 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT tr 4000 3500 SWITCHING ENERGY (J) V DD G = 667V 5 10 15 20 25 30 35 40 45 50 55 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000 V I DD = 667V R = 3 D J = 38A Eoff T = 125C J SWITCHING ENERGY (J) 3000 2500 2000 1500 1000 500 0 L = 100H E ON includes diode reverse recovery. 8000 T = 125C L = 100H EON includes diode reverse recovery. Eon 6000 4000 Eon 2000 12-2003 Eoff 050-7112 Rev A 0 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5 5 10 15 20 25 30 35 40 45 50 55 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT Typical Performance Curves 10% 90% APT10026L2FLL T = 125C J td(on) td(off) 90% tr 90% 10% tf 5% 10% 5% Switching Energy Switching Energy 0 Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF120 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit TO-264 MAXTM(L2) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7112 Rev A 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 12-2003 Gate Drain Source |
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