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| APM2700C Dual Enhancement Mode MOSFET (N and P-Channel) Features * N-Channel 20V/1.8A, RDS(ON)=170m(typ.) @ VGS=4.5V RDS(ON)=270m(typ.) @ VGS=2.5V Pin Description * P-Channel -20V/-1.2A, RDS(ON)=360m(typ.) @ VGS=-4.5V RDS(ON)=530m(typ.) @ VGS=-2.5V Top View of SOT-26 (6) D1 (2) S2 * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (1) G1 (3) G2 Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 (5) D2 (4) N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM2700C Lead Free Code Handling Code Tem p. Range Package Code Package Code C : SO T-26 O perating Junction Tem p. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : O riginal Device XXXXX - Date Code APM2700C C : M70X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM2700C Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Note: *Surface Mounted on 1in2 pad area, t 10sec. (TA = 25C unless otherwise noted) N Channel 20 8 1.8 VGS=4.5V 6 1 150 -55 to 150 TA=25C TA=100C 0.83 0.3 150 W C/W P Channel -20 8 -1.2 -5 -1 V A A C Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM2700C Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=16V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85C VDS=-16V, VGS=0V TJ=85C VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=8V, VDS=0V VGS=8V, VDS=0V VGS=4.5V, IDS=1.8A RDS(ON) a N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 1 30 -1 -30 0.45 -0.45 0.6 -0.6 1.2 -1.2 2 100 170 360 270 530 220 470 350 690 V A V A nA Drain-Source On-State Resistance VGS=-4.5V, IDS=-1.2A VGS=2.5V, IDS=0.9A VGS=-2.5V, IDS=-0.7A m Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM2700C Electrical Characteristics (Cont.) Symbol Parameter (TA = 25C unless otherwise noted) APM2700C Min. Typ. Max. Test Condition Unit Static Characteristics (Cont.) VSD a Diode Forward Voltage b ISD=0.5A, VGS=0V ISD=-0.5A, VGS=0V N-Ch P-Ch 0.8 -0.8 1.3 -1.3 V Dynamic Characteristics Ciss Input Capacitance N-Channel VGS=0V, VDS=20V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-20V, Frequency=1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch 130 140 25 40 15 30 2 3 17 18 4 10 18 20 4 6 32 33 8 19 33 37 ns pF Coss Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Crss td(ON) Tr Turn-on Rise Time N-Channel VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 P-Channel VDD=-10V, RL=10, IDS=-1A, VGEN=-4.5V, RG=6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch td(OFF) Turn-off Delay Time Tf Turn-off Fall Time b Gate Charge Characteristics Qg Total Gate Charge N-Ch N-Channel VDS=10V, VGS=4.5V, IDS=1.8A P-Channel VDS=-10V, VGS=-4.5V, IDS=-1.2A P-Ch N-Ch P-Ch N-Ch P-Ch 4.2 7 0.6 1.1 0.6 1.1 5.5 9 nC Q gs Gate-Source Charge Q gd Notes: Gate-Drain Charge a : Pulse test ; pulse width 300s, duty cycle 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM2700C Typical Characteristics N-Channel Power Dissipation 1.0 2.0 Drain Current 0.8 1.6 0.6 ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 Ptot - Power (W) 1.2 0.4 0.8 0.2 0.4 0.0 0.0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 20 10 it m Li n) o s( Rd Thermal Transient Impedance 2 1 0.2 0.1 Duty = 0.5 ID - Drain Current (A) 1 300s 1ms 10ms 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.1 100ms 1s DC 0.02 0.1 TA=25 C o 1 10 50 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RJA : 150 C/W 2 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM2700C Typical Characteristics (Cont.) N-Channel Output Characteristics 4.5 VGS= 4,5,6,7,8,9,10V 4.0 3.5 3V 350 VGS=2.5V 300 Drain-Source On Resistance 3.0 2.5 2.0 1.5 1.0 0.5 2.5V RDS(ON) - On - Resistance (m) ID - Drain Current (A) 250 200 VGS=4.5V 2V 150 1.5V 100 0 1 2 3 4 5 6 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 6 1.4 Gate Threshold Voltage IDS=250A Normalized Threshold Voltage 5 1.2 ID - Drain Current (A) 4 Tj=-55 C o 1.0 3 Tj=125 C o 0.8 2 Tj=25 C o 1 0.6 0 0.0 0.8 1.6 2.4 3.2 4.0 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 5 www.anpec.com.tw APM2700C Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance 1.75 VGS = 4.5V IDS = 1.8A 6 Source-Drain Diode Forward Normalized On Resistance 1.50 1.25 IS - Source Current (A) 1 Tj=150 C o Tj=25 C 0.1 o 1.00 0.75 o 0.50 -50 -25 RON@Tj=25 C: 170m 0 25 50 75 100 125 150 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 200 Frequency=1MHz 5 VDS=10V IDS =1.8A 4 Gate Charge 160 Ciss 120 VGS - Gate - source Voltage (V) 20 C - Capacitance (pF) 3 80 2 40 Crss 0 Coss 1 0 4 8 12 16 0 0 1 2 3 4 5 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 6 www.anpec.com.tw APM2700C Typical Characteristics P-Channel Power Dissipation 1.0 1.5 Drain Current 0.8 1.2 0.6 -ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 Ptot - Power (W) 0.9 0.4 0.6 0.2 0.3 0.0 0.0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area 20 10 im it Thermal Transient Impedance Normalized Transient Thermal Resistance 2 1 0.2 0.1 Duty = 0.5 -ID - Drain Current (A) Rd )L on s( 300s 1ms 1 0.1 0.05 0.02 0.01 10ms 0.1 100ms 1s DC o 0.01 Single Pulse 0.01 0.1 TA=25 C 1 10 50 1E-3 1E-4 1E-3 Mounted on 1in pad o RJA : 150 C/W 2 0.01 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 7 www.anpec.com.tw APM2700C Typical Characteristics (Cont.) P-Channel Output Characteristics 10 VGS= -5,-6,-7,-8,-9,-10V 8 800 700 600 500 400 300 200 100 VGS= -4.5V VGS= -2.5V Drain-Source On Resistance -4V 6 -3V 4 -2V 2 0 0 1 2 3 4 RDS(ON) - On - Resistance (m) -ID - Drain Current (A) 0 1 2 3 4 5 6 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 6 1.4 Gate Threshold Voltage IDS=-250A Normalized Threshold Voltage 5 1.2 -ID - Drain Current (A) 4 Tj=-55 C o 1.0 3 Tj=125 C o 0.8 2 Tj=25 C o 1 0.6 0 0 1 2 3 4 0.4 -50 -25 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM2700C Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance 1.8 V GS = -4.5V IDS = -1.2A Source-Drain Diode Forward 6 Normalized On Resistance 1.6 1.4 Tj=150 C o 1.2 -IS - Source Current (A) 1.0 1 Tj=25 C o 0.8 0.6 R ON@T j=25 C: 360m 0.4 -50 -25 0 25 50 75 100 125 150 o 0.3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (C) -VSD - Source - Drain Voltage (V) Capacitance 250 Frequency=1MHz 5 V DS= -10V IDS= -1.2A 4 Gate Charge 200 150 Ciss -VGS - Gate - source Voltage (V) 20 C - Capacitance (nC) 3 100 2 50 Crss Coss 1 0 0 4 8 12 16 0 0 1 2 3 4 5 6 7 8 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 9 www.anpec.com.tw APM2700C Packaging Information SOT-23-6 D 6 5 4 E H 1 2 3 S1 e D A A2 L1 A1 L2 L D im A A1 A2 b D E e H L L1 L2 S1 M i ll im et er s Min. 1.00 0.00 0.70 0.35 2.70 1.40 1 . 9 0 B SC 2.60 0.30 0.08 0.60 REF 0 0.85 10 1.05 10 Max. 1.45 0.15 1.25 0.55 3.10 1.80 3.00 0.25 In c h e s Min. Max. 0.0394 0.0571 0.0000 0.0591 0.0276 0.0492 0.0138 0.0217 0.1063 0.1220 0.50551 0.0709 0.07480 BSC 0.1024 0 . 11 8 1 0 0 0 11 8 0.0031 0.0098 0.024 REF 0 10 0.0335 0.0413 www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 APM2700C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 C to Peak T im e Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 11 www.anpec.com.tw APM2700C Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 12 www.anpec.com.tw APM2700C Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 1781 B C J T1 8.4 2 P1 T2 1.5 0.3 Ao 72 1.0 13.0 + 0.2 2.5 0.15 D D1 1.5 +0.1 Po 4.0 0.1 W 8.0+ 0.3 - 0.3 Bo P 4 0.1 Ko 1.4 0.1 E 1.75 0.1 t 0.20.03 SOT-23-6 F 3.5 0.05 1.5 +0.1 2.0 0.1 3.15 0.1 3.2 0.1 (mm) Cover Tape Dimensions Application SOT-23-6 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 13 www.anpec.com.tw WWW..COM Copyright (c) Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www..com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www..com |
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