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| AP9980M Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Surface Mount Package D1 G2 S2 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 52m 4.6A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 80 20 4.6 2.9 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200107041 AP9980M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 80 1 - Typ. 0.08 7 19 5 10 11 6 30 16 130 94 Max. Units 52 60 3 1 25 100 30 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=4.6A VGS=4.5V, ID=3.6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS= 20V ID=4A VDS=64V VGS=4.5V VDS=40V ID=1A RG=3.3,VGS=10V RD=40 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1820 2910 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.6A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/s Min. - Typ. 44 90 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP9980M 70 50 60 T A =25 C o ID , Drain Current (A) ID , Drain Current (A) 50 10V 7.0V 5.0V 4.5V 40 T A =150 o C 10V 7.0V 5.0V 4.5V 30 40 30 20 20 V G =3.0V 10 V G =3.0V 10 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 55 2.3 I D =3.6A T A =25 o C RDS(ON) (m ) 50 1.8 I D = 4.6 A V G =10V Normalized RDS(ON) 1.3 45 0.8 40 2 4 6 8 10 12 0.3 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 4 2.5 3 2 T j =150 o C T j =25 o C VGS(th) (V) 2 IS(A) 1.5 1 1 0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9980M f=1.0MHz 16 10000 I D =4A VGS , Gate to Source Voltage (V) V DS =64V V DS =50V V DS =40V C (pF) Ciss 1000 12 8 100 4 Coss Crss 0 0 10 20 30 40 50 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (R thja) 10 0.2 1ms ID (A) 1 0.1 0.1 0.05 PDM 0.02 0.01 10ms 100ms 0.1 t T 0.01 Single Pulse o T A =25 C Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135/W 1s DC 0.01 0.1 1 10 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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